Physical Sciences and Mathematics Commons^™

Si/Sige Bicmos Microsystems For Microwave And Millimeter-Wave Sensing And Communications, Hermann Schumacher

Physics Seminars

Since the early 1990’s, Silicon-Germanium heterojunction bipolar transistors revolutionized the way we build microwave and millimeter wave systems. Rivaling the once-dominant group III-V semiconductor devices in terms of speed, SiGe technologies also harness the maturity, yield and resulting complexity of Silicon based technology. The presentation will discuss this trend using examples from the author’s research in recent years.

The first example will show how a very inexpensive and „old“ SiGe HBT technology (0.8 μm feature size) was used to implement efficient impulse radio ultra-wideband (IUWB) sensors for vital sign detection and object tracking.

The second example, taken from a recently …