Physical Sciences and Mathematics Commons^™

Mobility Analysis Of Highly Conducting Thin Films: Application To Zno, David C. Look, K. D. Leedy, D. H. Tomich, B. Bayraktaroglu

Physics Faculty Publications

Hall-effect measurements have been performed on a series of highly conductive thin films of Ga-doped ZnO grown by pulsed laser deposition and annealed in a forming-gas atmosphere (5% H₂ in Ar). The mobility as a function of thickness d is analyzed by a simple formula involving only ionized-impurity and boundary scattering and having a single fitting parameter, the acceptor/donor concentration ratio K = N_A/N_D. For samples with d = 3–100 nm, K_avg = 0.41, giving N_D = 4.7×10²⁰ and N_A = 1.9×10²⁰ cm⁻³. Thicker samples require a …