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Full-Text Articles in Physical Sciences and Mathematics
Dynamics Of Optically-Generated Carriers In Si (100) And Si (111) Substrate-Grown Gaas/Algaas Core-Shell Nanowires, Ramon M. Delos Santos, Jasher John Ibañes, Maria Herminia Balgos, Rafael Jaculbia, Jessica Pauline Afalla, Michelle Bailon-Somintac, Elmer Estacio, Arnel Salvador, Armando Somintac, Christopher Que, Satoshi Tsuzuki, Kohji Yamamoto, Masahiko Tani
Dynamics Of Optically-Generated Carriers In Si (100) And Si (111) Substrate-Grown Gaas/Algaas Core-Shell Nanowires, Ramon M. Delos Santos, Jasher John Ibañes, Maria Herminia Balgos, Rafael Jaculbia, Jessica Pauline Afalla, Michelle Bailon-Somintac, Elmer Estacio, Arnel Salvador, Armando Somintac, Christopher Que, Satoshi Tsuzuki, Kohji Yamamoto, Masahiko Tani
Physics Faculty Publications
GaAs/Al0.1Ga0.9As core-shell nanowires (CSNWs), with average lateral size of 125 nm, were grown on gold nanoparticle-activated Si (100) and Si (111) substrates via molecular beam epitaxy. Room temperature-photoluminescence (RT-PL) from the samples showed bulk-like GaAs and Al0.1Ga0.9As bandgap emission peaks at 1.43 and 1.56 eV, respectively. Higher PL emission intensity of the sample on Si (111) compared to that on Si (100) is attributed to uniform Al0.1Ga0.9As shell passivation of surface states on Si (111)-grown CSNWs. Carrier dynamics in two different temporal regimes were studied. In the sub-nanosecond time scale (300–500 ps), time-resolved radiative recombination efficiency of carriers was examined. …