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Full-Text Articles in Physical Sciences and Mathematics
Competition Between Ferromagnetic Metallic And Paramagnetic Insulating Phases In Manganites, G. Li, H. Zhou, S. Feng, Xiaojuan Fan, X. Li, Z. Wang
Competition Between Ferromagnetic Metallic And Paramagnetic Insulating Phases In Manganites, G. Li, H. Zhou, S. Feng, Xiaojuan Fan, X. Li, Z. Wang
Xiaojuan Fan
La0.67Ca0.33Mn1−xCuxO3(x=0 and 0.15) epitaxial thin films were grown on the (100) LaAlO3 substrates, and the temperature dependence of their resistivity was measured in magnetic fields up to 12 T by a four-probe technique. We found that the competition between the ferromagnetic metallic (FM) and paramagnetic insulating (PI) phases plays an important role in the observed colossal magnetoresistance(CMR) effect. Based on a scenario that the doped manganites approximately consist of phase-separated FM and PI regions, a simple phenomenological model was proposed to describe the CMR effect. Using this model, we calculated the resistivity as functions of temperature and magnetic field. The …
Substantial Pressure Effect On The Resistivity And Curie Temperature For The Diluted Magnetic Semiconductor Sb2–X Vx Te3., Jeffrey Dyck, K. Ahilan, M. Aronson, C. Uher, P. Lošťák
Substantial Pressure Effect On The Resistivity And Curie Temperature For The Diluted Magnetic Semiconductor Sb2–X Vx Te3., Jeffrey Dyck, K. Ahilan, M. Aronson, C. Uher, P. Lošťák
Jeffrey Dyck
The influence of hydrostatic pressure on the electrical resistivity ρ and ferromagnetic transition temperature T C of bulk, single crystal Sb1–x Vx Te3 with x = 0.03 is presented. Pressure strongly suppresses ρ at all temperatures, with an overall decrease of about 35% at 1.6 GPa. The peak in ρ , a signature of T C, moves to lower temperature with increasing pressure. An overall suppression of T C near 40% at 1.6 GPa is observed. The results are discussed within the context of a carrier-mediated ferromagnetic exchange interaction.
Low-Temperature Ferromagnetic Properties Of The Diluted Magnetic Semiconductor Sb2-X Crx Te3 ., Jeffrey Dyck, Č. Drašar, P. LošŤÁK, C. Uher
Low-Temperature Ferromagnetic Properties Of The Diluted Magnetic Semiconductor Sb2-X Crx Te3 ., Jeffrey Dyck, Č. Drašar, P. LošŤÁK, C. Uher
Jeffrey Dyck
We report on magnetic and electrical transport properties of Sb2-x Crx Te3 single crystals with 0⩽x⩽0.095 over temperatures from 2 K to 300 K . A ferromagnetic state develops in these crystals at low temperatures with Curie temperatures that are proportional to x (for x>0.014 ), attaining a maximum value of 20 K for x=0.095 . Hysteresis below TC for the applied field parallel to the c axis is observed in both magnetization and Hall-effect measurements. Magnetic as well as transport data indicate that Cr takes the 3+ (3 d3 ) valence state, substituting for antimony in the host …
Low-Temperature Ferromagnetism And Magnetic Anisotropy In The Novel Diluted Magnetic Semiconductor Sb2−Xvxte3, Jeffrey Dyck, Wei Chen, Pavel Hájek, Petr Lošt’Ák, Ctirad Uher
Low-Temperature Ferromagnetism And Magnetic Anisotropy In The Novel Diluted Magnetic Semiconductor Sb2−Xvxte3, Jeffrey Dyck, Wei Chen, Pavel Hájek, Petr Lošt’Ák, Ctirad Uher
Jeffrey Dyck
We report on a novel diluted magnetic semiconductor based on the Sb2Te3 tetradymite structure doped with very low concentrations of vanadium (1–3at%). Anisotropy in the magnetic hysteresis loops and magnetoresistance are observed at temperatures below the ferromagnetic ordering temperature. A Curie temperature of 24K is observed for Sb1.97V0.03Te3.