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Defect-Induced Band Gap Narrowed Ceo2 Nanostructures For Visible Light Activities, Mohammad Mansoob Khan Dr, S. A. Ansari, D. Pradhan, D. H. Han, J Lee, M. H. Cho
Defect-Induced Band Gap Narrowed Ceo2 Nanostructures For Visible Light Activities, Mohammad Mansoob Khan Dr, S. A. Ansari, D. Pradhan, D. H. Han, J Lee, M. H. Cho
Dr. Mohammad Mansoob Khan
This work reports an electron beam irradiation (30 kGy and 90 kGy) approach to narrow the band gap of the pristine CeO2 nanostructure (p-CeO2) to enhance their visible light activity through defect engineering. This was confirmed by diffuse reflectance spectroscopy, photoluminescence, Raman spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy (XPS), Brunauer–Emmett–Teller, electrochemical impedance spectroscopy and linear scan voltammetry. XPS revealed changes in the surface states, composition, Ce4+ to Ce3+ ratio and other defects in the modified CeO2 nanostructures (m-CeO2). The m-CeO2 exhibits excellent photocatalytic activities by degrading 4-nitrophenol and methylene blue in the presence of visible light (λ > 400 nm) compared …