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Full-Text Articles in Physical Sciences and Mathematics
Doped Tio2 Nanowires For Applications In Dye Sensitized Solar Cells And Sacrifical Hydrogen Production, Qasem Alsharari
Doped Tio2 Nanowires For Applications In Dye Sensitized Solar Cells And Sacrifical Hydrogen Production, Qasem Alsharari
Electronic Thesis and Dissertation Repository
This thesis explores the synthesis of metal oxide 1-D nanowires using a sol-gel method in supercritical carbon dioxide (sc-CO2), as an environmental friendly enabling solvent. Porous nanowires were synthesized and their performance was tested in dye sensitized solar cell and sacrifical hydrogen production. Titanium isopropoxide (TIP) was used as a precursor for titania synthesis while copper, bismuth and indium were examined as dopants, respectively. The sol-gel reactions were catalyzed by acetic acid in CO2 at a temperature of 60 °C and pressure of 5000 psi. It was observed that acetic acid/monomer ratio > 4 produced nanowires while a …
Influence Of Copper Doping On The Performance Of Optically Controlled Gaas Switches, St. T. Ko, V. K. Lakdawala, K. H. Schoenbach, M. S. Mazzola
Influence Of Copper Doping On The Performance Of Optically Controlled Gaas Switches, St. T. Ko, V. K. Lakdawala, K. H. Schoenbach, M. S. Mazzola
Electrical & Computer Engineering Faculty Publications
The influence of the copper concentration in silicon-doped gallium arsenide on the photoionization and photoquenching of charge carriers was studied both experimentally and theoretically. The studies indicate that the compensation ratio (NCu/NSi) is an important parameter for the GaAs:Si:Cu switch systems with regard to the turn-on and turn-off performance. The optimum copper concentration for the use of GaAs:Si:Cu as an optically controlled closing and opening switch is determined.
An Optically Controlled Closing And Opening Semiconductor Switch, K. H. Schoenbach, V. K. Lakdawala, R. Germer, S. T. Ko
An Optically Controlled Closing And Opening Semiconductor Switch, K. H. Schoenbach, V. K. Lakdawala, R. Germer, S. T. Ko
Electrical & Computer Engineering Faculty Publications
A concept for a bulk semiconductor switch is presented, where the conductivity is increased and reduced, respectively, through illumination with light of different wavelengths. The increase in conductivity is accomplished by electron ionization from deep centers and generation of bound holes. The reduction of conductivity is obtained by hole ionization from the excited centers and subsequent recombination of free electrons and holes. The transient behavior of electron and hole density in a high power semiconductor (GaAs:Cu) switch is computed by means of a rate equation model. Changes in conductivity by five orders of magnitude can be obtained.