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Characterization Of Wide Band Gap Semiconductors And Multiferroic Materials, Bo Cai
Characterization Of Wide Band Gap Semiconductors And Multiferroic Materials, Bo Cai
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Structural, optical and electrical properties of zinc oxide (ZnO), aluminum nitride (AlN), and lutetium ferrite (LuFe2O4) have been investigated. Temperature dependent Hall Effect measurements were performed between 80 and 800 K for phosphorus (P) and arsenic (As) doped ZnO thin films grown on c-plane sapphire substrate by RF magnetron sputtering. These samples exhibited n-type conductivity throughout the temperature range with carrier concentration of 3.85 × 10 16 cm-3 and 3.65 × 10 17 cm-3 at room temperature for P-doped and As-doped ZnO films, respectively. The Arrhenius plots of free electron concentration of those doped samples showed …