Physical Sciences and Mathematics Commons^™

Luminescence And Structural Properties Of Silicon-Germanium Quantum Structures Fabricated By Ion Implantation, Matheus Coelho Adam

Electronic Thesis and Dissertation Repository

The advancement of semiconductor materials has played a crucial role in driving positive technological breakthroughs that impact humanity in numerous ways. The presence of defects significantly alters the physical properties of semiconductors, making their analysis essential in the fabrication of semiconductor devices. I presented a new method to quantify surface and near-surface defects in single crystal semiconductors. Epitaxially-grown silicon was measured by low energy electron diffraction (LEED) to obtain the surface Debye temperature (θ_D). The results showed the surface θ_D of bulk Si (001), 1.0 μm, and 0.6 μm Si on sapphire of 333 K, 299 K, …

Photoluminescence Of Beryllium-Related Defects In Gallium Nitride, Mykhailo Vorobiov, Mykhailo Vorobiov

Theses and Dissertations

This study explores the potential of beryllium (Be) as an alternative dopant to magnesium (Mg) for achieving higher hole concentrations in gallium nitride (GaN). Despite Mg prominence as an acceptor in optoelectronic and high-power devices, its deep acceptor level at 0.22 eV above the valence band limits its effectiveness. By examining Be, this research aims to pave the way to overcoming these limitations and extend the findings to aluminum nitride and aluminum gallium nitride (AlGaN) alloy. Key contributions of this work include. i)Identification of three Be-related luminescence bands in GaN through photoluminescence spectroscopy, improving the understanding needed for further material …

Optical Studies Of Wide Bandgap Photonic Materials, Nikesh Maharjan

Dissertations, Theses, and Capstone Projects

In this dissertation work, optical properties of wide bandgap materials such as hexagonal Boron Nitride (h-BN) and Zinc Oxide (ZnO) have been studied. Deep UV photoluminescence spectroscopy was employed to study the optical properties of bulk h-BN and powder crystals using a laser of wavelength 200 nm, which is the fourth harmonic of Ti:Sapphire laser as excitation source. The properties and chemical compositions of annealed and unannealed bulk h-BN were investigated. The PL spectra from h-BN samples annealed at 900 ºC in ambient air, had strong phonon assisted band edge emissions along with a sharp atomic-like emission line at 4.09 …

Electronic Structure Of Early Transition Metal Complexes Supported By Pyridine Polypyrrolide Ligands, Dylan Connor Leary

Graduate Theses, Dissertations, and Problem Reports

A thorough study of photoluminescent molecules involving the pyridine polypyrrole(ide) ligand platform has been conducted. A detailed analysis on speciation of the proligand H₂(^MesPDP^Ph) (H₂^MesPDP^Ph = 2,6-bis(5-mesityl-3-phenyl-1H-pyrrol-2-yl)-pyridine) and its dilithium salt Li₂(^MesPDP^Ph) revealed temperature- and solvent-dependent effects. These molecules, along with the hydrochloric acid adduct [H₃(^MesPDP^Ph)]Cl were found to exhibit short-lived photoluminescence in both tetrahydrofuran and benzene solution. These findings confirm the hypothesis that heavy-atom involvement is crucial for the favorable photophysical properties observed for the Zr(PDP)_{2 …}

Strain-Enhanced Coherent Exciton-Polaron States In 1d Phthalocyanine Crystalline Thin Films, Libin Liang

Graduate College Dissertations and Theses

Organic semiconductors are at the forefront of materials research, due to their desired electric and mechanical properties. They offer the unique opportunity to modify material properties during synthesis process, opening an avenue to the development of novel flexible and wearable electronic and photonic devices.Molecular excitons are of importance in organic semiconductor properties. While majority of research studies are centered on achieving good control of amorphous or polycrystalline thin film properties, the static disorder effect leads to poor device performance when compared to inorganic semiconductors with superior crystalline ordering. On the other hand, the macroscopic molecular long-range ordering can enhance device …

Fundamental Transport Properties In Silicon Quantum Structures, Nazban M. Darukhanawalla

Electronic Thesis and Dissertation Repository

In the field of silicon photonics, there is an effort to bridge the gap between electrical and optical signals on a single platform, creating a need for Si-based light sources. In this project, Si quantum structures – Si quantum wells and quantum dots in SiO2 were fabricated via solid state precipitation methods. Their properties were studied using X-ray photoelectron spectroscopy, photoluminescence and I-V measurements. Rutherford backscattering spectroscopy was used for depth analysis in monitoring the Si distribution. Different electrical transport mechanisms were explored to understand how an ensemble of silicon QD’s or a silicon quantum well behaves in an SiO2 …

Optical Properties Of Ultrathin In(Ga)As/Gaas And In(Ga)N/Gan Quantum Wells, Yurii Maidaniuk

Graduate Theses and Dissertations

Recently, structures based on ultrathin quantum wells (QWs) began to play a critical role in modern devices, such as lasers, solar cells, infrared photodetectors, and light-emitting diodes. However, due to the lack of understanding of the formation mechanism of ultrathin QWs during the capping process, scientists and engineers cannot fully explore the potential of such structures. This study aims to investigate how structural parameters of ultrathin QWs affect their emission properties by conducting a systematic analysis of the optical properties of In(Ga)As/GaAs and In(Ga)N/GaN ultrathin QWs. Specifically, the analysis involved photoluminescence measurements combined with effective bandgap simulation, x-ray diffraction, and …

Laser-Induced Modifications In Two-Dimensional Materials, Tariq Afaneh

USF Tampa Graduate Theses and Dissertations

Atomically thin two-dimensional (2D) materials have attracted a growing interest in the lastdecade from the fundamental point of view as well as their potential applications in functional devices. Due to their high surface-to-volume ratio, the physical properties of 2D materials are very sensitive to the environmental factor such as surrounding media and illumination conditions (e.g. light-mater interaction). In the first part of this dissertation I will present recent advances in developing laser-assisted methods to tune the physical properties of 2D transition metal dichalcogenides (TMDs). We demonstrate laser-assisted chemical modification ultrathin TMDs, locally replacing selenium by sulfur atoms. The photo-conversion process …

Si Nanocrystal Synthesis Via Double Implantation And Variable Implantation, James M. Gaudet

Electronic Thesis and Dissertation Repository

Silicon (Si) nanocrystals (nc) precipitated from silicon-implanted silicon oxide (SiO₂) are of interest as a novel light source for illumination, biomedical applications, optical computing, etc. They have some advantages over conventional III-V compound semiconductor nanocrystals produced by colloidal synthesis. They are compatible with Si/SiO₂ based semiconductor processing, are stable, non-toxic at point of synthesis and consumption, and their luminescence falls with the infrared transmission window of biological materials. Unfortunately, synthesis of Si-nc embedded SiO₂ is uneconomical and is not as amenable to precise control of the size distribution of nanocrystals as is the case for III-V …

Luminescence Emission In A Nanocrystal Doped By A Transition Metal Impurity, George Chappell Jr.

Theses, Dissertations and Capstones

In this thesis we consider the structure of magnetic ion centers with 3d-electrons in quantum dots under the effects of Coulomb and exchange interaction between the 3d-electrons of the impurity centers and the confined electrons (or holes) existing inside the nanocrystals. In particular, we are interested how this interaction changes the photoluminescence properties of those materials. We will make use of representation theory and the symmetry of the crystal structure to find the orthonormal wave functions that make up the wave functions of the outer, 3d-electrons inside our dot. The Coulomb and exchange interaction …

Near-Field And Far-Field Microscopic And Spectroscopic Characterizations Of Coupled Plasmonic, Excitonic And Polymeric Materials, Chih-Feng Wang

Optical Science and Engineering ETDs

The properties of localized surface plasmons (LSP) have been broadly utilized for chemical sensing, surface enhanced Raman spectroscopy, biomedical imaging and photothermal treatments. By exploiting well-established plasmonic effects, the spectroscopic investigation of intriguing quantum phenomena, such as excitonic interband and intersubband (ISB) transitions in semiconductor heterostructures, was examined and extended in both far- and near-field optical measurements. For far-field characterization, we used colloidal plasmonic Au nanorods (AuNRs) to increase the quantum efficiency of InGaAs/GaAs single quantum well. By analyzing the temperature-dependent photoluminescence enhancement as a function of GaAs capping layer thickness, we attributed the mechanism of the LSP enhancement to …

Tip-Enhanced Nano-Optical Imaging Of Superacid Treated Bilayer Mos2-Ws2 2d Lateral Heterostructures, Amala Dixit

USF Tampa Graduate Theses and Dissertations

Nanoscale optical characterization of two-dimensional (2D) materials and heterostructures is important for the design of novel optoelectronic flexible nano-devices. Nano-optical photoluminescence (PL) and Raman imaging of bilayer 2D materials has been a challenging problem due to weak signals. The exciton-dominated light emission of two-dimensional (2D) transition metal dichalcogenide (TMDC) materials is affected by the formation of defects and doping states. Previous studies have shown that chemical treatment modifies the defect and doping states of chemical vapor deposition (CVD)-grown monolayers of MoS₂ and WS₂, which provides a promising possibility for engineering the optoelectronic properties of these 2D TMDCs. …

Probing Quantized Excitations And Many-Body Correlations In Transition Metal Dichalcogenides With Optical Spectroscopy, Shao-Yu Chen

Doctoral Dissertations

Layered transition metal dichalcogenides (TMDCs) have attracted great interests in recent years due to their physical properties manifested in different polytypes: Hexagonal(H)-TMDC,which is semiconducting, exhibits strong Coulomb interaction and intriguing valleytronic properties; distorted octahedral(T’)-TMDC,which is semi-metallic, is predicted to exhibit rich nontrivial topological physics. In this dissertation,we employ the polarization-resolved micron-Raman/PL spectroscopy to investigate the optical properties of the atomic layer of several polytypes of TMDC. In the first part for polarization-resolved Raman spectroscopy, we study the lattice vibration of both H and T’-TMDC, providing a thorough understanding of the polymorphism of TMDCs. We demonstrate that Raman spectroscopy is a …

Plasmonic Enhancement Of Photoluminescence And Photobrightening In Cdse Quantum Dots, David Alan French

Graduate Theses and Dissertations

Quantum dots are gaining recognition not just in the physics and chemistry community, but in the public eye as well. Quantum dot technologies are now being used in sensors, detectors, and even television displays. By exciting quantum dots with light or electricity, they can be made to emit light, and by altering the quantum dot characteristics the wavelength can be finely tuned. The light emitted can be also be made more intense by an increase in the excitation energy. The excitation light can be increased via plasmonic enhancement, leading to increased luminescence. Aside from the relatively steady-state response, quantum dots …

Combined Spectroscopic And Scanning Probe Studies Of Electronic Interactions In Nanostructured 1d And 2d Semiconductors, Peijian Wang

Doctoral Dissertations

This dissertation includes the exploration about the following research questions: 1. What is the correlation between the work function and ground state interactions in organic semiconductor assemblies? 2. How do non-covalent chemical doping tune the work function in MoS₂? 3. Are there surface charges in the Aluminum doped ZnO nanocrystals (AZO) and what's the evolution of the surface charges and polarizabilities from undoped AZO to doped AZO? 4. How is the homogeneity like during doping in the organic thermoelectric materials? The techniques we employed in the research is the spatially registered Kelvin Probe Force Microscopy and Photoluminescence spectroscopy …

Near Bandgap Two-Photon Excited Luminescence Of Inas Quantum Dots, Xian Hu

Graduate Theses and Dissertations

Semiconductor quantum dots (QDs) confine carriers in three dimensions, resulting in atomic-like energy levels as well as size-dependent electrical and optical properties. Self-assembled III-V QD is one of the most studied semiconductor QDs thanks to their well-established fabrication techniques and versatile optical properties. This dissertation presents the photoluminescence (PL) study of the InAs/GaAs QDs with both above bandgap continuous-wave excitation (one-photon excitation) and below-bandgap pulse excitation (two-photon excitation). Samples of ensemble QDs, single QD (SQD), and QDs in a micro-cavity, all grown by molecular beam epitaxy, are used in this study. Morphology of these samples was examined using atomic force …

Photoluminescence From Gan Co-Doped With C And Si, Mykhailo Vorobiov

Theses and Dissertations

This thesis devoted to the experimental studies of yellow and blue luminescence (YL and BL relatively) bands in Gallium Nitride samples doped with C and Si. The band BL_C was at first observed in the steady-state photoluminescence spectrum under high excitation intensities and discerned from BL1 and BL2 bands appearing in the same region of the spectrum. Using the time-resolved photoluminescence spectrum, we were able to determine the shape of the BL_C and its position at 2.87 eV. Internal quantum efficiency of the YL band was estimated to be 90\%. The hole capture coefficient of the BL_{C …}

Thermal Quenching Of Photoluminescence In Zno And Gan, Nahla Albarakati

Theses and Dissertations

Investigation of the thermal quenching of photoluminescence (PL) in semiconductors provides valuable information on identity and characteristics of point defects in these materials, which helps to better understand and improve the properties of semiconductor materials and devices. Abrupt and tunable thermal quenching (ATQ) of PL is a relatively new phenomenon with an unusual behavior of PL. This mechanism was able to explain what a traditional model failed to explain. Usually, in traditional model used to explain “normal” quenching, the slope of PL quenching in the Arrhenius plot determines the ionization energy of the defect causing the PL band. However, in …

Study Of The Photoluminescence Spectra Of Mg-Doped Gan, Puranjan Ghimire

Theses and Dissertations

We have studied luminescence properties of Mg-doped GaN grown by hydride vapor phase epitaxy. Steady state photoluminescence (PL) spectra have been analyzed. Exciton, ultraviolet luminescence (UVL) and blue luminescence (BL) bands are the dominant PL bands in the spectra. At low temperature, Exciton and UVL bands show almost no shift with excitation intensity, whereas the BL band blueshifts by almost 0.4 ���� with increasing excitation intensity by seven orders of magnitude. Such shifting nature of bands with excitation intensity is explained by assuming that the BL band is detected from the region of the sample where potential fluctuations are very …

Beyond Conventional C-Plane Gan-Based Light Emitting Diodes: A Systematic Exploration Of Leds On Semi-Polar Orientations, Morteza Monavarian

Theses and Dissertations

Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the “Green Gap”, is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the “quantum confined Stark effect”) and low indium incorporation efficiency that …

Time-Resolved Photoluminescence Studies Of Point Defects In Gan, Joy Dorene Mcnamara

Theses and Dissertations

Time-resolved photoluminescence (TRPL) measurements paired with steady-state photoluminescence (SSPL) measurements can help to determine the PL lifetime, shape and position of unresolved bands, capture coefficients, and concentrations of free electrons and defects.PL bands that are obscured in the SSPL spectra can be accurately revealed by TRPL measurements. TRPL measurements are able to show if the PL band originates from an internal transition between different states of the same defect. The main defect-related PL bands in high-purity GaN grown by hydride vapor phase epitaxy (HVPE) which have been investigated are the ultraviolet, blue, green, yellow and red luminescence bands (UVL, BL, …

Investigation Of Optical And Electronic Properties Of Au Decorated Mos2, Udai Bhanu

Electronic Theses and Dissertations

Achieving tunability of two dimensional (2D) transition metal dichalcogenides (TMDs) functions calls for the introduction of hybrid 2D materials by means of localized interactions with zero dimensional (0D) materials. A metal-semiconductor interface, as in gold (Au) - molybdenum disulfide (MoS2), is of great interest from the standpoint of fundamental science as it constitutes an outstanding platform to investigate optical and electronic properties due to charge transfer. The applied aspects of such systems introduce new options for electronics, photovoltaics, detectors, catalysis, and biosensing. Here in this dissertation, we study the charge transfer interaction between Au nanoparticals and MoS2 flakes and its …

Control Of Light-Matter Interaction Via Dispersion Engineering, Harish Natarajan Swaha Krishnamoorthy

Dissertations, Theses, and Capstone Projects

This thesis describes the design, fabrication and characterization of certain nanostructures to engineer light-matter interaction. These materials have peculiar dispersion properties owing to their structural design, which is exploited to control spontaneous emission properties of emitters such as quantum dots and dye molecules. We will discuss two classes of materials based on the size of their unit cell compared to the wavelength of the electromagnetic radiation they interact with. The first class are hyperbolic metamaterials (HMM) composed of alternate layers of a metal and a dielectric of thicknesses much smaller than the wave- length. Using a HMM composed of silver …

Optical And Magnetic Properties Of Nanostructures, Neha Nayyar

Electronic Theses and Dissertations

In this thesis, Density Functional Theory and Time-Dependent Density-Functional Theory approaches are applied to study the optical and magnetic properties of several types of nanostructures. In studies of the optical properties we mainly focused on the plasmonic and excitonic effects in pure and transition metal-doped noble metal nanochains and their conglomerates. In the case of pure noble metal chains, it was found that the (collective) plasmon mode is pronounceable when the number of atoms in the chain is larger than 5. The plasmon energy decreases with further with increasing number of atoms (N) and is almost N-independent when N is …

Investigating The Influence Of Interface And Vacancy Defects On The Growth Of Silicon Quantum Dots In Sio2, John Phelan

Electronic Thesis and Dissertation Repository

The effects of interface and vacancy defects on silicon quantum dot (Si-QD) growth are investigated using measurements of Time Resolved Photoluminescence (TRPL), Photoluminescence (PL) Spectroscopy and Electron Paramagnetic Resonance (EPR). Thermally grown SiO₂ thin films (280nm) were irradiated with high energy (400keV – 1MeV) silicon ions in order to introduce defects into the Si-QD growth layer of SiO₂. A noticeable increase in PL emission intensity is seen with the highest energy pre-implanted sample over a single implant sample. TRPL results show increased radiative lifetimes for the lower energy (400keV) pre-implant while little or no difference is seen …

The Effect Of Temperature On The Electrical And Optical Properties Of P-Type Gan, Joy Mcnamara

Theses and Dissertations

The development of gallium nitride (GaN) light emitting devices has reached extraordinary echelons. As such, the characterization and analysis of the behavior of GaN materials is essential to the advancement of GaN technology. In this thesis, the effect of temperature on the optical and electrical properties of p-type GaN is investigated. The GaN samples used in this work were grown by various methods and studied by Kelvin probe and photoluminescence (PL) techniques. Specifically, the surface photovoltage (SPV) behavior and PL data were analyzed at different temperatures and illumination intensities. Using the SPV results, we show that p-type GaN exhibits n-type …

The Study Of Optoelectronics In Semiconductor And Metallic Nanoparticle Hybrid Systems, Daniel G. Schindel

Electronic Thesis and Dissertation Repository

This thesis examines optoelectronics of photonic crystals and photonic nanofibers, especially with quantum dots and metallic nanoparticles doped into them. The simulations produced focus on the quantum dots, which are presented in an ensemble of 3-level systems.

In order to consider a photonic nanofiber in isolation, a model was developed for the density of photonic states. We studied two profiles, a square cross-section and a circular cross-section. In addition, we consider two architectures, one where a photonic crystal surrounds a dielectric fiber, and one where the fiber is another photonic crystal. We found several photonic nanofibers with a single bound …

Thermal Quenching Of Photoluminescence From Gan, Anita Olsen

Theses and Dissertations

GaN is a III-V semiconductor that is a promising material used in production of light emitting devices and high power/high frequency electronics. The electronic and optical properties of GaN are subdued by defects that occur during the growth processes of this material. The emitted photoluminescence (PL) from optically excited GaN gives insight into the origins and effects of point defects within the crystal lattice structure of GaN. In this study, PL spectroscopy is used to examine and analyze the point defects that occur in Zn-doped GaN. The blue luminescence band seen in undoped and Zn-doped GaN have identical fine structure …

Electrical And Optical Characterization Of Si-Ge-Sn, Merle D. Hamilton

Theses and Dissertations

The electrical characterization of boron-doped p-Si_0.08Ge_0.90Sn_0.02/p-Ge(100) and p-Si_0.112Ge_0.86Sn_0.028/n-Si(100) with various epilayer thicknesses was measured using the Hall effect. The room temperature sheet carrier concentration ranged from 1.21 x 10¹³ – 1.32 x 10¹⁶ cm^-2. The room temperature mobilities were measured to be between 166 and 717 cm²/V·s, depending on sample composition. In the low temperature regime, the mobility was mainly affected by ionized impurity scattering. In the high temperature regime, the mobility was mainly affected by …

Synthesis Of Ald Zinc Oxide And Thin Film Materials Optimization For Uv Photodetector Applications, Kandabara Nouhoum Tapily

Electrical & Computer Engineering Theses & Dissertations

Zinc oxide (ZnO) is a direct, wide bandgap semiconductor material. It is thermodynamically stable in the wurtzite structure at ambient temperature conditions. ZnO has very interesting optical and electrical properties and is a suitable candidate for numerous optoelectronic applications such as solar cells, LEDs and UV-photodetectors. ZnO is a naturally n-type semiconductor. Due to the lack of reproducible p-type ZnO, achieving good homojunction ZnO-based photodiodes such as UV-photodetectors remains a challenge. Meanwhile, heterojunction structures of ZnO with p-type substrates such as SiC, GaN, NiO, AlGaN, Si etc. are used; however, those heterojunction diodes suffer from low efficiencies. ZnO is an …