Open Access. Powered by Scholars. Published by Universities.®
Physical Sciences and Mathematics Commons™
Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 2 of 2
Full-Text Articles in Physical Sciences and Mathematics
Nanoscale Electronics Based On 2d Dopant Patterns In Silicon, T. -C. Shen, J. S. Kline, T. Schenkel, S. J. Robinson, J. -Y. Ji, C. L. Yang, R. R. Du, J. R. Tucker
Nanoscale Electronics Based On 2d Dopant Patterns In Silicon, T. -C. Shen, J. S. Kline, T. Schenkel, S. J. Robinson, J. -Y. Ji, C. L. Yang, R. R. Du, J. R. Tucker
T. -C. Shen
A nanoscale fabrication process compatible with present Si technology is reported. Preimplanted contact arrays provide external leads for scanning tunneling microscope (STM)-defined dopantpatterns. The STM’s low energy electron beam removes hydrogen from H terminated Si(100) surfaces for selective adsorption of PH3 precursor molecules, followed by room temperature Si overgrowth and 500 °C rapid thermal anneal to create activated P-donor patterns in contact with As+-implanted lines. Electrical and magnetoresistance measurements are reported here on 50 and 95 nm-wide P-donor lines, along with Ga-acceptor wires created by focused ion beams, as a means for extending Si device fabrication toward …
Low Temperature Silicon Epitaxy On Hydrogen Terminated Si(100) Surfaces, J. -Y. Ji, T. -C. Shen
Low Temperature Silicon Epitaxy On Hydrogen Terminated Si(100) Surfaces, J. -Y. Ji, T. -C. Shen
T. -C. Shen
Si deposition on H terminated Si(001)-2×1 surfaces at temperatures 300–530K is studied by scanning tunneling microscopy. Hydrogen apparently hinders Si adatom diffusion and enhances surface roughening. The post-growth annealing effect is analyzed. Hydrogen is shown to remain on the growth front up to at least 10ML. Si deposition onto the H/Si(001)-3×1 surface at 530K suggests that dihydride units further suppress Si adatom diffusion and increase surface roughness.