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Full-Text Articles in Physical Sciences and Mathematics
Determination Of Defect Distribution In A Ga-Rich Zno/Cds/Cu(In,Ga)Se_2 Solar Cell By Admittance Spectroscopy, Habi̇be Bayhan
Determination Of Defect Distribution In A Ga-Rich Zno/Cds/Cu(In,Ga)Se_2 Solar Cell By Admittance Spectroscopy, Habi̇be Bayhan
Turkish Journal of Physics
This article presents a study on the energy distribution of defects in efficient thin film ZnO/CdS/Cu(In,Ga)Se_2 heterojunction solar cell by the use of admittance spectroscopy. The capacitance spectra of the device has been analyzed using a model based on the existence of a homogeneous distribution of bulk acceptors in the absorber Cu(In,Ga)Se_2 layer. This model reveals an emission from a distribution of hole traps centered at an activation energy of about 300 meV with a defect density of 1.2 \times 10^{17} eV^{-1} cm^{-3}. The band gap of the absorber layer is estimated to be about 1.46 eV which corresponds to …
Admittance And Impedance Spectroscopy On Cu(In,Ga)Se_2 Solar Cells, A. Sertap Kavasoglu, Habi̇be Bayhan
Admittance And Impedance Spectroscopy On Cu(In,Ga)Se_2 Solar Cells, A. Sertap Kavasoglu, Habi̇be Bayhan
Turkish Journal of Physics
The present work reports some experimental results on the electrical properties of high efficiency ZnO/CdS/Cu(In,Ga)Se_2 heterojunction solar cells. Admittance spectroscopy has been employed for characterisation of the bulk and interface levels in the absorber Cu(In,Ga)Se_2 layer. The temperature dependent capacitance-frequency analysis indicated an emission from a shallow acceptor like defect level with an activation energy of about 75 meV. Information on the equivalent circuit model of the devices has been provided by the analysis of impedance measurements. The impedance data are presented in the Nyquist plot at several dc bias voltages at 300 K. The equivalent circuit model consisting of …