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41st Rocky Mountain Conference On Analytical Chemistry Aug 1999

41st Rocky Mountain Conference On Analytical Chemistry

Rocky Mountain Conference on Magnetic Resonance

Final program, abstracts, and information about the 41st annual meeting of the Rocky Mountain Conference on Analytical Chemistry, co-sponsored by the Colorado Section of the American Chemical Society and the Rocky Mountain Section of the Society for Applied Spectroscopy. Held in Denver, Colorado, August 1-5, 1999.


Science And Security Watch: A Threat To The United States From Foreign Graduate Students Training In Physics?, Ibpp Editor Jul 1999

Science And Security Watch: A Threat To The United States From Foreign Graduate Students Training In Physics?, Ibpp Editor

International Bulletin of Political Psychology

This article critiques concerns of some United States (US) security analysts that foreign graduate students in physics who train at universities within the US present security vulnerabilities for the US.


Speed Range For Breakdown Waves, Mostafa Hemmati, Eric L. George, Frances Terry Jan 1999

Speed Range For Breakdown Waves, Mostafa Hemmati, Eric L. George, Frances Terry

Journal of the Arkansas Academy of Science

Considering the electrons as the main element in breakdown wave propagation and using a one-dimensional, steady-state, three-fluid, hydrodynamical model, previous investigations have resulted in the completion of a set of equations for conservation of mass, momentum, and energy. We will use the terms proforce and antiforce waves, depending on whether the applied electric field force on electrons is with or against the direction of wave propagation. In the case of antiforce waves, the electron gas temperature and therefore the electron fluid pressure is assumed to be large enough to sustain the wave propagation down the discharge tube. For strong discontinuity …


A New Formalism For Nonextensive Physical Systems: Tsallis Thermostatistics, Uğur Tirnakli, Fevzi Büyükkiliç, Doğan Demi̇rhan Jan 1999

A New Formalism For Nonextensive Physical Systems: Tsallis Thermostatistics, Uğur Tirnakli, Fevzi Büyükkiliç, Doğan Demi̇rhan

Turkish Journal of Physics

Although Boltzmann-Gibbs (BG) statistics provides a suitable tool which enables us to handle a large number of physical systems satisfactorily, it has some basic restrictions : (i) the range of the microscopic interactions must be small compared to the linear size of the macroscopic systems (short-range interactions) , (ii) the time range of the microscopic memory must be small compared to the observation time (Marcovian processes) and (iii) the system must evolve in an Euclidean-like space-time. In the case of a breakdown in one and/or the others of these restrictions, BG statistics fails. More precisely, the situation could be classified …


Assessment Of The Degree Of Mix Of Powder Mixtures, Orhan Vai̇zoğlu Jan 1999

Assessment Of The Degree Of Mix Of Powder Mixtures, Orhan Vai̇zoğlu

Turkish Journal of Physics

The older methods for the determination of the degree of a random mix was solely based on the calculation of a simple standard deviation. Physical characteristics like, density, average particle weight and size of each component was not considered. Therefore, the evaluation, when the state of a random mix is reached, was somewhat superficial. Poole, Taylor, and Wall [1] have derived equations, where the physical characteristics of the components were taken into consideration. By this means, it is possible to calculate, in advance, the theoretical coefficient of variation and the corresponding confidence limits. One can then experimentally follow under which …


Diverging Strains Near Threshold: Breakdown Of The Elastic Description Of A Charge Density Wave Model, Muhittin Mungan, Susan N. Coppersmith, Valeri M. Vinokur Jan 1999

Diverging Strains Near Threshold: Breakdown Of The Elastic Description Of A Charge Density Wave Model, Muhittin Mungan, Susan N. Coppersmith, Valeri M. Vinokur

Turkish Journal of Physics

We analyze the strains near threshold in 1-d charge density wave models at zero temperature and strong pinning. We show that in these models local strains diverge near the depinning threshold and characterize the scaling behavior of the phenomenon. This helps quantify when the underlying elastic description breaks down and plastic effects have to be included.


Electron Liquid Beyond The Random Phase Approximation, Mehmet Tomak, Ceyhun Bulutay Jan 1999

Electron Liquid Beyond The Random Phase Approximation, Mehmet Tomak, Ceyhun Bulutay

Turkish Journal of Physics

A deeper understanding of low-dimensional and small-scale electronic systems requires an accurate characterization of the many-electron effects. Based on the electron liquid (EL) model, these many-body effects in the three-dimensional (3D) and two-dimensional (2D) electronic systems are dealt going beyond the random phase approximation within the zero-temperature framework. The dielectric formulation of the many-body problem is recapitulated and the longitudinal dielectric function of the EL is obtained using the self-consistent local-field correction scheme, known as STLS, under a general spin-valley degeneracy. Extensive explicit expressions are provided for the use of other researchers. The performance of this formalism is compared in …


Spectral Broadening Functions, Slavek Rucinski Jan 1999

Spectral Broadening Functions, Slavek Rucinski

Turkish Journal of Physics

Many astrophysical phenomena involving velocity fields produce broadening of spectral lines. Frequently, the cross-correlation function (CCF) is used to extract information about this broadening from segments of high resolution spectra. CCF has become the standard tool for handing extraction of radial-velocity and broadening information from high resolution spectra as it permits integration of information which is common to many spectral lines into one function which is easy to calculate, visualize and interpret. However, it can be argued that this is not the best tool for applications such as determinations of metallicities ([Fe/H]), for finding locations of star spots on active …


Short-Period Rs Cvn And W Uma Binaries: How Are They Related?, Frans Van't Veer Jan 1999

Short-Period Rs Cvn And W Uma Binaries: How Are They Related?, Frans Van't Veer

Turkish Journal of Physics

Two groups of late-type very close main sequence binaries, the so-called short-period RS Canum Venaticorum (RS CVn) and W Ursae Majoris (W UMa) systems, are important for the understanding of the structure and evolutionary consequencies of angular momentum loss (AML) resulting from magnetic stellar winds of fast rotating solar type stars. The components of RS CVn stars are close to their Roche lobes, but still detached, whereas W UMa binaries are contact systems; both are rotating fast. One of the crucial problems is trying to answer the question if there is a dynamical relation between the two types of binaries …


Photon Counting In Astrophotometry. Fundamentals And Some Advices For Beginners, Romualdas Kalytis Jan 1999

Photon Counting In Astrophotometry. Fundamentals And Some Advices For Beginners, Romualdas Kalytis

Turkish Journal of Physics

The beginners in astrophotometry are reminded of fundamentals of photon counting. Several advices for new users of electrophotometric technics are given.


Photometric Imaging Of Starspots, Techniques And Reliability, Zeki̇ Eker Jan 1999

Photometric Imaging Of Starspots, Techniques And Reliability, Zeki̇ Eker

Turkish Journal of Physics

Historical development of the starspot hypothesis and the unsolved problems associated with it are presented. The "non{uniqueness" attributed to the spot solutions is a major problem which could still discredit current efforts of starspot modeling by photometric or spectroscopic data. The basics of the starspot photometry(direct and inverse photometric problem, and the error analysis of the inverse problem) are presented. Since an analytical formulation exists to compute synthetic light curves from the physical parameters of spots, and recomputing original parameters analytically from the synthetic curves are also possible, the starspot hypothesis is a consistent physical problem. According to the error …


Facular Structures On Cool Stars, Serdar Evren Jan 1999

Facular Structures On Cool Stars, Serdar Evren

Turkish Journal of Physics

Activity has many manifestations, from dark spots to bright regions, to the presence of the heated chromosphere, to the superheated corona. Sunspots are extended, strongly magnetic regions on the Sun. Photospheric faculae are generally visible only at the limb. Polar faculae are smaller than the main-zone faculae. The contributions of the active region faculae and the facular network are at least as important as the solar spots in augmenting the solar emission.


Dynamical Evolution Of The Rs Cvn-Type Binaries, Osman Demi̇rcan Jan 1999

Dynamical Evolution Of The Rs Cvn-Type Binaries, Osman Demi̇rcan

Turkish Journal of Physics

The orbital angular momentum (orbital AM) of a sample of forty RS CVn-type binaries with the orbital periods P \leq 10 days were estimated and the orbital AM distribution with respect to P was critically interpreted as the orbital AM evolution of these systems caused by the magnetic breaking process with the existence of spin-orbit coupling. The empirical relations (between the orbital AM loss, mass loss and period variation) derived from the diagram of the orbital AM distribution were used in deriving a semi-empirical formula for the dynamical evolution of the RS CVn-type binaries. The magnetic breaking induced dynamical evolution …


Co-Ordinated Multi-Wavelength Observations Of The Rs Cvn System Cf Tuc, Edwin Budding, K. L. Jones, O. B. Slee, L. Watson Jan 1999

Co-Ordinated Multi-Wavelength Observations Of The Rs Cvn System Cf Tuc, Edwin Budding, K. L. Jones, O. B. Slee, L. Watson

Turkish Journal of Physics

A `multi-site, multi-wavelength' campaign on the eclipsing RS CVn binary CF Tuc was carried out in 1996 over both optical (photometry and spectroscopy) and radio (microwave) ranges. The microwave data was taken with the Australia Telescope Compact Array (ATCA). It covered slightly more than one complete orbital cycle at 4.8 and 8.64 GHz in one continuous run. There was also coverage of about 25% of the light curve at 1.38 and 2.38 GHz. High dispersion spectroscopy was obtained using the McLellan 1m telescope and échelle spectrograph at Mt John University Observatory (New Zealand). Supporting photometry came from various smaller-scale facilities …


Ionizing Radiations And Annealing Influence On Mosfet Charge States, Zainabidinov Ciragiddin, Atamuratov Atabek, Ysupov Akhmed, Adinaev Kuvondik Jan 1999

Ionizing Radiations And Annealing Influence On Mosfet Charge States, Zainabidinov Ciragiddin, Atamuratov Atabek, Ysupov Akhmed, Adinaev Kuvondik

Turkish Journal of Physics

The threshold voltage shift \Delta V_T and its components due to trapped-oxide charges \Delta V_{Not} and Si-SiO_2 interface traps \Delta V_N in MOSFET exposed to Bremsstrahlung, Co_{60} irradiation and annealing were studied. Several effects caused by differences in the photon energies from two types of sources are discussed as well as a mechanism of changing the trapped-oxide and Si-SiO_2 interface traps by annealing. The mechanism is based on previously available models.


Determination Of Partial Coordinate Number Of Atoms In Amorphous Yb-As-S(Se, Te) Systems, Rasi̇m Ali̇-Zade, Eldar Efendi̇yev, Elman Haji̇yev Jan 1999

Determination Of Partial Coordinate Number Of Atoms In Amorphous Yb-As-S(Se, Te) Systems, Rasi̇m Ali̇-Zade, Eldar Efendi̇yev, Elman Haji̇yev

Turkish Journal of Physics

Partial coordinate number for amorphous compounds, consisting three type of atoms has been determined by way of calculation of the radial distribution curve maximum. The equation solution method has been used as algorithm in programme, which writed in FORTRAN language for working in IBM compatible computers. The programme is compact and integable. The programme has been used for determination partial coordinate number of ytterbium atom in amorphous compounds- YbAs_2S_4, Yb_3As_4S_9, YbAs_4Te_7, Yb_3As_4Se_9 YbAs_4Se_7. Real value of partial coordinate number of ytterbium in this compunds is 2 or 3.


Calibration Of Millimetric Marmara Radio Telescope And Radio Detection Of Ozone Line Over Gebze/Kocaeli In Turkey, Mehmet Emi̇n Özel, I. M. Yusifov, A. O. Allakhverdiev, A. A. Vertiy, G. Bayer, Osman Demi̇rcan, H. Kirbiyik, T. Adigüzel Jan 1999

Calibration Of Millimetric Marmara Radio Telescope And Radio Detection Of Ozone Line Over Gebze/Kocaeli In Turkey, Mehmet Emi̇n Özel, I. M. Yusifov, A. O. Allakhverdiev, A. A. Vertiy, G. Bayer, Osman Demi̇rcan, H. Kirbiyik, T. Adigüzel

Turkish Journal of Physics

A brief description of the calibration procedures for the millimetric Marmara Radio Telescope, MRT-2 is presented. Observations carried out during the spectroscopic calibration work is indicative of daily variations of Ozone line of sight density over the telescope location. This being also the first radio observations carried out in Turkey, a short account of observations and results are given.


Magnetodielectrical Polymer Compositional Materials, Sh. V. Mamedov, Y. Lenger, Sevi̇l Bolcal, Vilayet A. Alekperov, M. A. Ramazanov, R. Z. Sadikhov Jan 1999

Magnetodielectrical Polymer Compositional Materials, Sh. V. Mamedov, Y. Lenger, Sevi̇l Bolcal, Vilayet A. Alekperov, M. A. Ramazanov, R. Z. Sadikhov

Turkish Journal of Physics

Magnetodielectrical polymer compositional materials containing carbonyl iron (CI) were obtained. The changes of permittivity and permeability, loss angle tangent, resistivity, mechanical and electrical properties, depending on the content of carbonyl iron have been investigated. It is shown that the magnetodielectrical materials with 20-40% mass content of carbonyl iron have possible practical use.


Electrons And Phonons In Gan Semiconductor Quantum Well Devices, M. Babiker, N. A. Zakhleniuk, C. R. Bennett, V. N. Stavrou, B. K. Ridley Jan 1999

Electrons And Phonons In Gan Semiconductor Quantum Well Devices, M. Babiker, N. A. Zakhleniuk, C. R. Bennett, V. N. Stavrou, B. K. Ridley

Turkish Journal of Physics

Electrons and polar optical phonons and their interactions are considered in the context of semiconductor quantum well devices, with particular reference to real quantum well laser structures. Distinction is made between wide-barrier and narrow-barrier structures and we explore the implications of these regimes for the description of the electron capture process. Special emphasis is made on the significant effects arising from the large effective mass ratio in AlN/GaN structures.


Heat Pulse Studies Of The Emission And Absorption Of Acoustic Phonons In Gaas Quantum Wells And Wires, A. J. Kent Jan 1999

Heat Pulse Studies Of The Emission And Absorption Of Acoustic Phonons In Gaas Quantum Wells And Wires, A. J. Kent

Turkish Journal of Physics

This paper reviews some recent experiments in which heat pulse techniques have been used to study the interaction of acoustic phonons with electrons in semiconductor quantum wells and wires. Heat pulse experiments provide temporal and spatial resolution of the phonons that are emitted or absorbed by the electrons and so give more detailed information about the electron-phonon interaction than can be obtained by other methods (e.g. transport measurements). Phonon experiments demonstrate clearly the effect of the electron confinement on the carrier-phonon interaction and the overall energy loss rate due to acoustic phonon emission. A qualitative explanation of the results is …


Electrons In Large-Bandgap Bulk Semiconductors And Quantum Wells, N. A. Zakhleniuk, M. Babiker, C. R. Bennett, B. K. Ridley Jan 1999

Electrons In Large-Bandgap Bulk Semiconductors And Quantum Wells, N. A. Zakhleniuk, M. Babiker, C. R. Bennett, B. K. Ridley

Turkish Journal of Physics

The analytical theory of hot electrons interacting with lattice vibrations, impurities, and interface roughness in quantum wells is developed. We have obtained new distribution functions which describe all the kinetic properties of the non-equilibrium electron gas. As a specific example we present the electric field dependence of the electron mobility in GaN-based quantum wells and in bulk GaN. The relative importance of the different scattering mechanisms is analysed in detail.


Coherent Control Experiments As A Probe Of The Carrier Scattering Processes, P. Le Jeune, X. Marie, T. Amand, M. Paillard, J. Barrau Jan 1999

Coherent Control Experiments As A Probe Of The Carrier Scattering Processes, P. Le Jeune, X. Marie, T. Amand, M. Paillard, J. Barrau

Turkish Journal of Physics

We report on coherent control experiments of excitons in GaAs/AlGaAs Quantum wells.This technique, which relies on the linear response of the crystal,is used to investigate the spin-dependent exciton-exciton scattering.


Energy Relaxation Rate Of Hot Electrons In N-Type Gan Epilayers Using Heat Pulse Techniques, P. Hawker, A. J. Kent, T. S. Cheng, C. T. Foxon Jan 1999

Energy Relaxation Rate Of Hot Electrons In N-Type Gan Epilayers Using Heat Pulse Techniques, P. Hawker, A. J. Kent, T. S. Cheng, C. T. Foxon

Turkish Journal of Physics

We have measured the energy relaxation rate of hot electrons in MBE grown bulk GaN epilayers on GaAs and sapphire substrates over the electron temperature range 1 - 130 K. The measurements were made using heat pulse techniques. For layers grown on GaAs substrates the results show that the carriers reside in the substrate, probably as in a GaAs/AlGaAs heterojunction. For layers grown on sapphire substrates we obtain a P \propto T^4_e dependence for the relaxation rate in the low temperature limit, consistent with piezoelectric coupling in the so-called `dirty' regime, changing to a linear dependence in the high temperature, …


Feasibility Of The Gainp/Ingaas/Gaas System For Modulation Doped Field-Effect Transistors, C. Besi̇kci̇, Y. Ci̇van Jan 1999

Feasibility Of The Gainp/Ingaas/Gaas System For Modulation Doped Field-Effect Transistors, C. Besi̇kci̇, Y. Ci̇van

Turkish Journal of Physics

Si-doped single Ga_{0.51}In_{0.49}P layers and GaInP/InGaAs/GaAs modulation doped field-effect transistor structures grown by gas source molecular beam epitaxy were characterized in detail through Hall-Effect and Deep Level Transient Spectroscopy techniques. Electrical characterization of the undoped and moderately Si-doped (N_D = 3 x 10^{17} cm^{-3}) GaInP layers yielded an electron trap with an activation energy of 0.75 eV and a temperature dependent capture cross section with a capture barrier of 0.593 eV showing DX center properties. The trap was not detected in highly Si doped (N_D = 4 x 10^{18} cm^{-3}) as grown layers suggesting that it is a defect complex …


Novel Detectors And Lasers For Telecommunications, Anthony J. Vickers, Hamid R. Mashayekhi, Pattara Aiyarak, Diego Oriato Jan 1999

Novel Detectors And Lasers For Telecommunications, Anthony J. Vickers, Hamid R. Mashayekhi, Pattara Aiyarak, Diego Oriato

Turkish Journal of Physics

For the most part the field of optoelectronics has been dominated by the pn junction for both detector and laser applications. This domination will probably hold true for laser applications for many more years although the simple forward biased junction may be challenged by other novel approaches as increased complexity is required such as multi-wavelength emission, wavelength conversion, and Thz operation. The first real novel use of the pn junction was developed by Balkan et al. [1]. Their HELLISH device paved the way for novel approaches in the use of the pn junction. In this paper I shall introduce another …


3 \Mu M Intersubband Quantum Well Photodetector (Qwip), Rita Gupta, A. L. Y. Wong, S. K. Haywood Jan 1999

3 \Mu M Intersubband Quantum Well Photodetector (Qwip), Rita Gupta, A. L. Y. Wong, S. K. Haywood

Turkish Journal of Physics

In recent years photodetectors operating in the mid- to far infrared region of 3-15 \mu m have been designed based on electron and hole intersubband transitions in multiple quantum wells and superlattices. In general, QWIPs based on electron transitions show greater detectivity compared to the hole-based photodetectors. However, selection rules for electron intersubband transitions usually forbid the TE mode operation, associated with normal light incidence; Therefore, special coupling structures/geometries have been employed to couple light into the device. The spectral region 3-5 \mu m is of interest for a variety of applications such as environmental gas sensing, thermal imaging etc. …


Semiconductor And Dielectric Microcavity Spectroscopy, Ali̇ Serpengüzel Jan 1999

Semiconductor And Dielectric Microcavity Spectroscopy, Ali̇ Serpengüzel

Turkish Journal of Physics

Semiconductor and dielectric microcavities are used for the localization of photons as well as the enhancement of photon density of states. The enhancement of photoluminescence, electroluminescence, and lasing by the use of microcavities leads to novel active and passive optoelectronic and photonic devices such as channel droppping filters, semiconductor lasers, and resonant cavity enhanced devices. Experimental results showing photoluminescence enhancement in active planar, lasing in active ellipsoidal microcavities as well as light scattering in passive and spherical microcavities are presented.


The Extended Hybrid Model For Optical Phonon Confinement, C. R. Bennett, B. K. Ridley, N. A. Zakhleniuk, M. Babiker Jan 1999

The Extended Hybrid Model For Optical Phonon Confinement, C. R. Bennett, B. K. Ridley, N. A. Zakhleniuk, M. Babiker

Turkish Journal of Physics

The theory of optical phonons and their confinement in heterostructures is reviewed with analogies made to the theory of acoustic phonons. The dielectric continuum (DC) model is obtained when bulk dispersion is ignored and the hybrid model is found when dispersion is included. The issue of boundary conditions is investigated and the solutions are shown with comparisons made using electron-phonon scattering.


Wigner Crystalization In Semiconductor Quantum Wires, I. Al-Hayek, B. Tanatar, M. Tomak Jan 1999

Wigner Crystalization In Semiconductor Quantum Wires, I. Al-Hayek, B. Tanatar, M. Tomak

Turkish Journal of Physics

We study the Wigner crystallization in semiconductor quantum wires within the density functional approach. As the density of electrons in quasi-one-dimensional structures is lowered, we find that the system favors the crystalline phase as envisioned by Wigner.


Improvement In Electroabsorption And The Effect Of The Electric Field In The Tuneable Wavelength Converter, Hüseyi̇n Sari, Esi̇n Kasapoğlu, Yüksel Ergün, İsmai̇l Sökmen Jan 1999

Improvement In Electroabsorption And The Effect Of The Electric Field In The Tuneable Wavelength Converter, Hüseyi̇n Sari, Esi̇n Kasapoğlu, Yüksel Ergün, İsmai̇l Sökmen

Turkish Journal of Physics

The numerical results of the study of a novel wavelength converter which can be tuned with the application of an external field are presented. For this device, exciton binding energies, radiuses and the absorption coefficient are numerically analysed as a function of electric field. We showed that the interband transition energy and the overlap function between electron and hole changes abruptly when an electric field is applied. This phenomenon can be used the increase the change in the absorption coefficient and reduce the on-state transmission loss in electroabsorption modulators.