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Full-Text Articles in Physical Sciences and Mathematics
Electron Tunneling And X-Ray Photoelectron Spectoscopy Studies Of The Superconductiong Properties Of Nitrogen-Doped Niobium Resonator Cavities, Eric M. Lechner, Basu Dev Oli, Junki Makita, Gianluigi Ciovati, Alex Gurevich, Maria Iavarone
Electron Tunneling And X-Ray Photoelectron Spectoscopy Studies Of The Superconductiong Properties Of Nitrogen-Doped Niobium Resonator Cavities, Eric M. Lechner, Basu Dev Oli, Junki Makita, Gianluigi Ciovati, Alex Gurevich, Maria Iavarone
Physics Faculty Publications
We use scanning tunneling microscopy (STM) and spectroscopy (STS), and x-ray photoelectron spectroscopy (XPS) to investigate the effect of nitrogen doping on the surface electronic and chemical structures of cutouts from superconducting Nb radio-frequency cavities. The goal of this work is to get insights into the fundamental physics and materials mechanisms behind the striking decrease of the surface resistance with the radio-frequency magnetic field, which has been observed on N-doped Nb cavities. Our XPS measurements reveal significantly more oxidized Nb 3d states and a thinner metallic suboxide layer on the N-doped Nb surfaces, which is also confirmed by tunneling spectroscopy …
Wet Chemical Digital Etching Of Gaas At Room Temperature, Gregory C. Desalvo, Christopher A. Bozada, John L. Ebel, David C. Look, John P. Barrette, Charles L. A. Cerny, Ross W. Dettmer, James K. Gillespie, Charles K. Havasy, Thomas J. Jenkins, Kenichi Nakano, Carl I. Pettiford, Tony K. Quach, James S. Sewell, G. David Via
Wet Chemical Digital Etching Of Gaas At Room Temperature, Gregory C. Desalvo, Christopher A. Bozada, John L. Ebel, David C. Look, John P. Barrette, Charles L. A. Cerny, Ross W. Dettmer, James K. Gillespie, Charles K. Havasy, Thomas J. Jenkins, Kenichi Nakano, Carl I. Pettiford, Tony K. Quach, James S. Sewell, G. David Via
Physics Faculty Publications
A new room temperature wet chemical digital etching technique for GaAs is presented which uses hydrogen peroxide and an acid in a two‐step etching process to remove GaAs in approximately 15 Å increments. In the first step, GaAs is oxidized by 30% hydrogen peroxide to form an oxide layer that is diffusion limited to a thickness of 14 to 17 Å for time periods from 15 to 120 s. The second step removes this oxide layer with an acid that does not attack unoxidized GaAs. These steps are repeated in succession until the desired etch depth is obtained. Experimental results …