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Full-Text Articles in Physical Sciences and Mathematics
Electron Beam Lithography And Dimensional Metrology For Fin And Nanowire Devices On Ge, Sige And Geoi Substrates, Nikolay Petkov, Margarita Georgieva, Sinan Bugu, Ray Duffy, Brendan Mccarthy, Maksym Myronov, Ann-Marie Kelleher, Graeme Maxwell, Giorgos Fagas
Electron Beam Lithography And Dimensional Metrology For Fin And Nanowire Devices On Ge, Sige And Geoi Substrates, Nikolay Petkov, Margarita Georgieva, Sinan Bugu, Ray Duffy, Brendan Mccarthy, Maksym Myronov, Ann-Marie Kelleher, Graeme Maxwell, Giorgos Fagas
Physical Sciences Publications
Until now there is no systematic study on the effect of the substrate type on the hydrogen silsesquioxane (HSQ) electron beam lithography (EBL) patterning process. We investigate arrays of line structures with varying width and spacing, starting at 10 nm, exposed at varying dose, and developed by salty NaOH and TMAH developers on group IV semiconductor substrates. We demonstrate that the HSQ EBL process on Ge is much more limited in achieving the smallest obtainable features, having optimal uniformity and fidelity, in comparison to Si. Monte-Carlo simulations of the e-beam/substrate interactions for “pure” Si and Ge substrates, and varying content …