Physical Sciences and Mathematics Commons^™

Highly Conductive Zno Grown By Pulsed Laser Deposition In Pure Ar, Robin C. Scott, Kevin D. Leedy, Burhan Bayraktaroglu, David C. Look, Yong-Hang Zhang

Physics Faculty Publications

Ga-doped ZnO was deposited by pulsed laser deposition at 200 °C on SiO₂/Si, Al₂O₃, or quartz in 10 mTorr of pure Ar. The as-grown, bulk resistivity at 300 K is 1.8×10⁻⁴ Ω cm, three-times lower than that of films deposited at 200 °C in 10 mTorr of O₂ followed by an anneal at 400 °C in forming gas. Furthermore, depth uniformity of the electrical properties is much improved. Mobility analysis shows that this excellent resistivity is mostly due to an increase in donor concentration, rather than a decrease in acceptor concentration. Optical …