Physical Sciences and Mathematics Commons^™

The Investigation Of The Complex Dielectric And Electric Modulus Of Al/Mg${}_{2}$Si/P-Si Schottky Diode And Its Ac Electrical Conductivity In A Wide Frequency Range, Ömer Sevgi̇li̇

Turkish Journal of Physics

The Al/Mg${}_{2}$Si/p-Si Schottky diode was fabricated using spin coating. The real ($\varepsilon$$\mathrm{\prime}$) and imaginary ($\varepsilon$$\mathrm{\prime}$$\mathrm{\prime}$) components of complex dielectric ($\varepsilon$*), the real (M$\mathrm{\prime}$) and imaginary (M$\mathrm{\prime}$$\mathrm{\prime}$) components of complex electric modulus (M*) and AC electrical conductivity ($\sigma$${}_{AC}$) of the fabricated Al/Mg${}_{2}$Si/p-Si Schottky diode (SD) were examined by using the impedance spectroscopy (IS) measurements in a wide frequency range of 1 kHz-1 MHz. The $\varepsilon$$\mathrm{\prime}$ and $\varepsilon$$\mathrm{\prime}$$\mathrm{\prime}$ were obtained using the value of measured capacitance and conductance while the values of dielectric loss tangent (tan$\delta$, M$\mathrm{\prime}$, M$\mathrm{\prime}$$\mathrm{\prime}$ and $\sigma$${}_{AC}$${}_{\ }$were obtained using the value of $\varepsilon$$\mathrm{\prime}$ and $\varepsilon$$\mathrm{\prime}$$\mathrm{\prime}$. While the values …