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Some Physical Properties Of \Gamma Irradiated Ge_X(As_2te_3)_{100 - X} Chalcogenide System, Afaf Abdel-Aal, Bahiga Abdel-Hameed Mansour, Hoda Mohamed Eissa

Turkish Journal of Physics

The effect of \gamma -radiation on the electrical conductivity, switching, and optical properties of the chalcogenide amorphous system Ge_x(As_2Te_3)_{100 - x} (where x = 0,1,5,10 atm %) have been studied. The results show that the radiation causes a shift of the optical gap,as well as a change in the electrical activation energy and the threshold voltage. As the \gamma -doses increase, the values of the allowed indirect optical energy gap E_{opt} for the different compositions decreases and the tail energy width increases.