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Effect Of Annealing Temperature On Structural, Electrical, And Uv Sensingcharacteristics Of N-Zno/P-Si Heterojunction Photodiodes, Şenol Kaya

Turkish Journal of Physics

The aim of this study is to investigate the influences of annealing temperature on initial device characteristics and their correlations with ultraviolet (UV) radiation sensitivity of n-type zinc oxide/p-silicon (n-ZnO/p-Si) heterojunction photodiodes. Evolutions on the crystalline structure, surface morphology, ideality factor, barrier potential, interface state density, and donor concentration were systematically analyzed during the initial device characterizations before testing the UV sensitivities of the photonic devices. The results demonstrate that the sensitivity of each n-ZnO/p-Si photodiode annealed at various temperatures was linearly correlated with different UV illumination intensities. The devices annealed at 750 ºC and 550 ºC exhibit more sensitive …