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Influence Of The Nitrogen Concentration On The Electrical Characteristic Of Hydrogenated Amorphous Silicon Nitride (A-Sin_X:H) Based Schottky Diodes, İlker Ay, Hüseyi̇n Tolunay

Turkish Journal of Physics

In this study, the Schottky diode characteristic of hydrogenated amorphous silicon nitride (a-SiN_x:H) samples containing various amounts of nitrogen have been investigated via both I-V and C-V measurements. From forward bias I-V measurements in the dark, the barrier height of samples (\phi_{B0}), ideality factor (\eta ), modified Richardson constant (A^\ast) and series resistances (R_s) have been obtained as the function of temperature for different nitrogen content. In addition, forward and reverse bias current ratios (I_f/I_r) at V~=~1 volt have been investigated as the function of temperature for different nitrogen content. Light sensitivity of the samples has also been investigated under …