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Full-Text Articles in Physical Sciences and Mathematics
Toward High-Performance Nanostructured Thermoelectric Materials: The Progress Of Bottom-Up Solution Chemistry Approaches, Yixin Zhao, Jeffrey S. Dyck, Clemens Burda
Toward High-Performance Nanostructured Thermoelectric Materials: The Progress Of Bottom-Up Solution Chemistry Approaches, Yixin Zhao, Jeffrey S. Dyck, Clemens Burda
Physics
Significant research effort has recently gone into the synthesis of thermoelectric nanomaterials through different chemical approaches since nanomaterials chemistry became a promising strategy for improving thermoelectric performance. Different thermoelectric nanocrystals, especially PbTe, Bi2Te3 and CoSb3, with various compositions and morphologies have been successfully prepared by solvo/hydrothermal, electrochemical, and ligand-based synthesis methods. Such nanoscale materials show not only substantial reduction in thermal conductivity due to increased phonon scattering at nanoscale grain boundaries and lower densities of phonon states but possibly also an enhancement in thermopower due to electronic quantum size effects. More recently, the notoriously low …
Photoexcitation And Photoionization From The 2p53p[5/2]2,3 Levels In Neon, M. A. Baig, I. A. Bokhari, M. Rafiq, M. A. Kalyar, T. Hussian, Raheel Ali, Naveed K. Piracha
Photoexcitation And Photoionization From The 2p53p[5/2]2,3 Levels In Neon, M. A. Baig, I. A. Bokhari, M. Rafiq, M. A. Kalyar, T. Hussian, Raheel Ali, Naveed K. Piracha
Physics
We present measurements of the excitation spectra from the 2p53p [5/2]3,2 levels in neon using two-step laser excitation and ionization in conjunction with an optogalvanic detection in dc and rf discharge cells. The 2p53p [5/2]3,2 intermediate levels have been approached via the collisionally populated 2p53s [3/2]2 metastable level. The Rydberg series 2p5(2P3/2)nd [7/2]4 (12 ⩽ n ⩽ 44), 2p5(2P3/2)ns [3/2]2 (13 ⩽ n ⩽ 35) and the parity forbidden transitions 2p5(2P3/2)np …
Oscillator Strength Measurements Of The 5s6s 1s0→5snp 1p1 Rydberg Transitions Of Strontium, S. U. Haq, M. A. Kalyar, M. Rafiq, R. Ali, Naveed K. Piracha, M. A. Baig
Oscillator Strength Measurements Of The 5s6s 1s0→5snp 1p1 Rydberg Transitions Of Strontium, S. U. Haq, M. A. Kalyar, M. Rafiq, R. Ali, Naveed K. Piracha, M. A. Baig
Physics
We report the experimentally determined oscillator strengths for the 5s6s 1S0→5snp 1P1 Rydberg transitions of strontium using two-step excitation in conjunction with a thermionic diode ion detector. The absolute photoionization cross section from the 5s6s 1S0 excited state has been determined by adjusting the polarization vector of the ionizing laser beam parallel, perpendicular, and at the magic angle with respect to that of the exciting dye laser. The measured absolute value of the photoionization cross section 0.9±0.2 Mb at the 5s threshold is used to extract the f values of the 5s6s 1 …
Defect Structure Of Sb2−Xcrxte3 Single Crystals, Jeffrey Dyck, J. HoráK, P. C. Quayle, Č. DrašAr, P. LošT’ÁK, C. Uher
Defect Structure Of Sb2−Xcrxte3 Single Crystals, Jeffrey Dyck, J. HoráK, P. C. Quayle, Č. DrašAr, P. LošT’ÁK, C. Uher
Physics
Single crystals of Sb2Te3 doped with Cr (cCr=0–6×1020 cm-3) were prepared by the Bridgman method. The measurements of the Hall coefficient reveal a nonmonotonous dependence of hole concentrations on the Cr content in the crystal. The hole concentration decreases at low content of Cr, while at higher content of Cr it increases again. However, according to magnetic measurements, Cr atoms enter the structure and form uncharged substitutional defects CrSb×, which cannot affect the free carrier concentration directly. The observed dependence can be elucidated by means of a point defect …
Significant Suppression Of Ferromagnetism By Hydrostatic Pressure In The Diluted Magnetic Semiconductor Sb2−Xvxte3 With Xï0.03, Jeffrey Dyck, T J. Mitchell, A J. Luciana, P. C. Quayle, Č. DrašAr, P. LošT’ÁK
Significant Suppression Of Ferromagnetism By Hydrostatic Pressure In The Diluted Magnetic Semiconductor Sb2−Xvxte3 With Xï0.03, Jeffrey Dyck, T J. Mitchell, A J. Luciana, P. C. Quayle, Č. DrašAr, P. LošT’ÁK
Physics
No abstract provided.
Structure Inhomogeneities, Shallow Defects, And Charge Transport In The Series Of Thermoelectric Materials K2bi8−Xsbxse13, Jeffrey S. Dyck, T. Kyratski, E. Hatzikraniotis, K. M. Paraskevopoulos, C. D. Malliakas, C. Uher, M. G. Kanatzidis
Structure Inhomogeneities, Shallow Defects, And Charge Transport In The Series Of Thermoelectric Materials K2bi8−Xsbxse13, Jeffrey S. Dyck, T. Kyratski, E. Hatzikraniotis, K. M. Paraskevopoulos, C. D. Malliakas, C. Uher, M. G. Kanatzidis
Physics
The charge transport properties of the low-dimensional thermoelectric materials K2Bi8-xSbxSe13 (02Bi8-xSbxSe13 was analyzed on the basis of the classical semiconductor theory and discussed in the context of recent band calculations. The results suggest that the K2Bi8-xSbxSe13 materials possess coexisting domains with semimetallic and semiconducting characters whose ratio is influenced by the value of x and by local defects. The extent and relative distribution of these domains control the charge transport properties. Electron diffraction experiments performed on samples of K2 …