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A. Hydrogenated amorphous silicon nitride; B. Substrate temperature; C. Dark conductivity; D. Photoconductivity; E. Optical gap.
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Full-Text Articles in Physical Sciences and Mathematics
Effects Of Substrate Temperature On Properties Of A-Sin_X:H Films, Tayyar Güngör, Hüseyi̇n Tolunay
Effects Of Substrate Temperature On Properties Of A-Sin_X:H Films, Tayyar Güngör, Hüseyi̇n Tolunay
Turkish Journal of Physics
Hydrogenated amorphous silicon nitride films were prepared in an rf glow-discharge system by the decomposition of silane + nitrogen gas mixture at various substrate temperatures. The effects of substrate temperature on the electrical and optical properties of the films have been studied.