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Full-Text Articles in Physical Sciences and Mathematics
Large And Realistic Models Of Amorphous Silicon, Dale Ingram, Bishal Bhattarai, Parthapratim Biswas, David A. Drabold
Large And Realistic Models Of Amorphous Silicon, Dale Ingram, Bishal Bhattarai, Parthapratim Biswas, David A. Drabold
Faculty Publications
Amorphous silicon (a-Si) models are analyzed for structural, electronic and vibrational characteristics. Several models of various sizes have been computationally fabricated for this analysis. It is shown that a recently developed structural modeling algorithm known as force-enhanced atomic refinement (FEAR) provides results in agreement with experimental neutron and X-ray diffraction data while producing a total energy below conventional schemes. We also show that a large model (∼ 500 atoms) and a complete basis is necessary to properly describe vibrational and thermal properties. We compute the density for a-Si, and compare with experimental results.
Chemical Vapor Deposited Amorphous Silicon For Use In Photothermal Conversion, David D. Allred, D. C. Booth, M. Janai, G. Weiser, B. O. Seraphin
Chemical Vapor Deposited Amorphous Silicon For Use In Photothermal Conversion, David D. Allred, D. C. Booth, M. Janai, G. Weiser, B. O. Seraphin
Faculty Publications
Efficient photothermal conversion requires surfaces of high solar absorptance and low thermal emittance. This can be accomplished by the tandem action of a good infrared reflector overlaid by a film of sufficient solar absorptance that is transparent in the infrared. Crystalline silicon is a suitable candidate for the absorber layer. Its indirect band gap, however, results in a shallow absorption edge that extends to far into the visible. In contrast, the absorption edge of amorphous silicon is steeper and located farther into the infrared, resulting in a larger solar absorptance. We report on the fabrication of amorphous silicon absorbers by …
The Use Of Nuclear Reactions And Sims For Quantitative Depth Profiling Of Hydrogen In Amorphous Silicon, David D. Allred, G. J. Clark, C. W. White, B. R. Appleton, C. W. Magee, D. E. Carlson
The Use Of Nuclear Reactions And Sims For Quantitative Depth Profiling Of Hydrogen In Amorphous Silicon, David D. Allred, G. J. Clark, C. W. White, B. R. Appleton, C. W. Magee, D. E. Carlson
Faculty Publications
Depth profiles for hydrogen in amorphous silicon have been determined by the use of resonant nuclear reactions [1H(15N,αγ)12C and 1H(19F,αγ)16O] and by secondary ion mass spectroscopy (SIMS). Independent calibration procedures were used for the two techniques. Measurements were made on the same amorphous silicon film to provide a direct comparison of the two hydrogen analysis techniques. The hydrogen concentration in the bulk of the film was determined to be about 9 at % H. The SIMS results agree with the resonant nuclear reaction results to within 10%, which demonstrates that quantitative hydrogen depth profiles can be obtained by SIMS analysis …