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Modeling Hydrogen Diffusion For Solar Cell Passivation And Process Optimization, Yi Zhang

Dissertations

A diffusion model for hydrogen (H) in crystalline silicon was established which takes into account the charged state conversion, junction field, mobile traps, and complex formation and dissociation at dopant and trap sites. Carrier exchange among the various charged species is a "fast" process compared to the diffusion process. A numerical method was developed to solve the densities of various charged species from the Poisson's equation that involves shallow-level dopants and one "negative U" impurity, e.g., H. Time domain implicit method was adopted in finite difference scheme to solve the fully coupled equations.

Limiting versions of the model were applied …