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Full-Text Articles in Physical Sciences and Mathematics
Optimization Of The 3 M Tgm Beamline, At Camd, For Constant Initial State Spectroscopy, Yaroslav B. Losovyj, Ihor Ketsman, Eizi Morikawa, Zhenjun Wang, Jinke Tang, Peter A. Dowben
Optimization Of The 3 M Tgm Beamline, At Camd, For Constant Initial State Spectroscopy, Yaroslav B. Losovyj, Ihor Ketsman, Eizi Morikawa, Zhenjun Wang, Jinke Tang, Peter A. Dowben
Jinke Tang
The 3 m toroidal grating monochromator (TGM) VUV beamline at CAMD/LSU was realigned to achieve better illumination of the monochromator gratings with the goal of substantially increasing the flux at the higher photon energies. This is partly accomplished through a tilting of the monochromator (by about of 13.5°), with respect to the plane defined by the synchrotron, providing a smaller grazing angle at the initial mirrors. The improved performance of the beamline permits resonant photoemission studies at Gd 4d core threshold without resorting to second order light, which we demonstrate for Gd doped HfO2.
Gd-Doping Of Hfo2, Ihor Ketsman, Yaroslav B. Losovyj, Jinke Tang, Zhenjun Wang, M. L. Natta, Jennifer I. Brand, Peter A. Dowben
Gd-Doping Of Hfo2, Ihor Ketsman, Yaroslav B. Losovyj, Jinke Tang, Zhenjun Wang, M. L. Natta, Jennifer I. Brand, Peter A. Dowben
Jinke Tang
An increase in the density of states between the oxygen 2p bands and the Fermi level is seen with increasing Gd concentrations. In addition, for the Gd-doped HfO2 films, the Gd 4f photoexcitation peak at 5.5 eV below the valence band maximum was identified using resonant photoemission. Electrical measurements show pronounced rectification properties for lightly-doped Gd:HfO2 films on p-Si and for heavily-doped Gd:HfO2 films on n-Si, suggesting a crossover from n-type to p-type behavior with increasing doping level. In addition, there is an increase in the reverse bias current with neutron irradiation.