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Thin film devices

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Full-Text Articles in Physical Sciences and Mathematics

Effect Of Alkali On The Efficiency And Reliability Of Cu(In,Ga)Se2 Solar Cells, Shankar Karki Apr 2019

Effect Of Alkali On The Efficiency And Reliability Of Cu(In,Ga)Se2 Solar Cells, Shankar Karki

Physics Theses & Dissertations

The incorporation of alkali metal has contributed tremendously in a bid to realize greater than 20% efficient Cu(In,Ga)Se2(CIGS) solar cells. Achieving high efficiency is one key parameter for the success of a photovoltaic technology but so is its long-term stability. In this thesis, the relationship between the performance of alkali treated Cu(In,Ga)Se2 solar cells and their physicochemical, electronic and structural properties are explored through a comparative study between standard devices and alkali (K, Rb) treated devices. The alkali treated devices tend to have a lower concentration of Ev+0.98 eV trap, higher majority carrier concentration and …

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High-Efficiency Solar Cells Based On Cu(Inal)Se[Sub 2] Thin Films, S. Marsillac, P. D. Paulson, M. W. Haimbodi, R. W. Birkmire, W. N. Shafarman Jan 2002

High-Efficiency Solar Cells Based On Cu(Inal)Se[Sub 2] Thin Films, S. Marsillac, P. D. Paulson, M. W. Haimbodi, R. W. Birkmire, W. N. Shafarman

Electrical & Computer Engineering Faculty Publications

A Cu(InAl)Se2solar cell with 16.9% efficiency is demonstrated using a Cu(InAl)Se2thin film deposited by four-source elemental evaporation and a device structure of glass/Mo/Cu(InAl)Se2/CdS/ZnO/indium tin oxide/(Ni/Algrid)/MgF2. A key to high efficiency is improved adhesion between the Cu(InAl)Se2 and the Mo back contact layer, provided by a 5-nm-thick Ga interlayer, which enabled the Cu(InAl)Se2 to be deposited at a 530 °C substrate temperature. Film and device properties are compared to Cu(InGa)Se2 with the same band gap of 1.16 eV. The solar cells have similar behavior, with performance limited by recombination through …

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