Physical Sciences and Mathematics Commons^™

Controlled Microfabrication Of High-Aspect-Ratio Structures In Silicon At The Highest Etching Rates: The Role Of H2o2 In The Anodic Dissolution Of Silicon In Acidic Electrolytes, Chiara Cozzi, Giovanni Polito, Kurt W. Kolasinski, Giuseppe Barillaro

Chemistry Faculty Publications

In this work the authors report on the controlled electrochemical etching of high-aspect-ratio (from 5 to 100) structures in silicon at the highest etching rates (from 3 to 10 µm min−1) at room temperature. This allows silicon microfabrication entering a previously unattainable region where etching of high-aspect-ratio structures (beyond 10) at high etching rate (over 3 µm min−1) was prohibited for both commercial and research technologies. Addition of an oxidant, namely H2O2, to a standard aqueous hydrofluoric (HF) acid electrolyte is used to dramatically change the stoichiometry of the silicon dissolution process under anodic biasing without loss of etching control …