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Physical Sciences and Mathematics Commons

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Engineering

UNLV Theses, Dissertations, Professional Papers, and Capstones

2023

Spectroscopy

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Full-Text Articles in Physical Sciences and Mathematics

Development And Characterization Of Lead & Lead-Free Perovskite Solar Cell Materials, Rubaiya Murshed Aug 2023

Development And Characterization Of Lead & Lead-Free Perovskite Solar Cell Materials, Rubaiya Murshed

UNLV Theses, Dissertations, Professional Papers, and Capstones

In recent years, perovskite photovoltaic technology has offered enormous viability and dimensionality in solar cell research. As a light-harvesting active layer, Perovskite generated remarkable development in device efficiency of 25.7% for the single-junction solar cell, and over 33% for the perovskite/silicon tandem solar cell. Also, perovskite-perovskite tandem solar cell (also called all-perovskite tandem solar cell) shows great potential in device performance and achieved a power conversion efficiency (PCE) of 26.4%. Transitioning photovoltaic technology from the laboratory to commercial products, high PCE, low cost, long lifetime, and low toxicity are some of the critical factors to consider during material selection. Pb-halide …


Spectroscopic Studies On Silicon And Chalcopyrite Materials For Solar Energy Applications, Amandee Hua May 2023

Spectroscopic Studies On Silicon And Chalcopyrite Materials For Solar Energy Applications, Amandee Hua

UNLV Theses, Dissertations, Professional Papers, and Capstones

In this dissertation, silicon-based materials for photovoltaics and chalcopyrite-based materials for photoelectrochemical water splitting are investigated using various spectroscopic and microscopic techniques. Although silicon dominates the photovoltaic market, further improvement can be made by using an alternative low temperature passivation approach. Currently, thermally grown SiO2 passivation is commonly used for silicon solar cells. However, this technique requires high processing temperatures (>800 °C), which increases the thermal budget, potentially decreases the bulk quality of Si, and can lead to difficulties in implementing in production lines. Here, a S-based passivation approach is studied that require lower processing temperatures of ~550 °C. …