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Full-Text Articles in Physical Sciences and Mathematics
Substitution Of Y For Pr In Prmn2ge2-The Magnetism Of Pr0.8y0.2mn2ge2, Jianli Wang, S J. Campbell, M Hofmann, S J. Kennedy, M Avdeev, M F. Md Din, R Zeng, Z X. Cheng, S X. Dou
Substitution Of Y For Pr In Prmn2ge2-The Magnetism Of Pr0.8y0.2mn2ge2, Jianli Wang, S J. Campbell, M Hofmann, S J. Kennedy, M Avdeev, M F. Md Din, R Zeng, Z X. Cheng, S X. Dou
Shi Xue Dou
Pr0.8Y0.2Mn2 Ge 2 is found to exhibit four magnetic transitions on decreasing the temperature from the paramagnetic region: (i) paramagnetism to intralayer antiferromagnetism (AFl) at TN intra; (ii) AFl to canted ferromagnetism (Fmc) at TC inter; (iii) Fmc to conical magnetic ordering of the Mn sublattice (Fmi) at Tcc; and (iv) Fmi(Mn) to Fmi(Mn) + F(Pr) at TC Pr. These changes in magnetic structure are discussed in terms of changes in the Mn-Mn separation distances caused by the unit cell contraction and by electronic effects due to replacement of 20% of Pr with Y.
Magnetism And Magnetic Structures Of Prmn2ge2-Xsix, Jianli Wang, S J. Campbell, M Hofmann, S J. Kennedy, R Zeng, M Md Din, S X. Dou, A Arulraj, N Stusser
Magnetism And Magnetic Structures Of Prmn2ge2-Xsix, Jianli Wang, S J. Campbell, M Hofmann, S J. Kennedy, R Zeng, M Md Din, S X. Dou, A Arulraj, N Stusser
Shi Xue Dou
The structural and magnetic properties of seven PrMn2Ge2-xSix compounds with Si concentrations in the range x = 0.0-2.0 have been investigated by x-ray diffraction, magnetic (5- 350 K), differential scanning calorimetry (300-500 K) and neutron diffraction (3-480 K) measurements. Replacement of Ge by Si leads to a contraction of the unit cell and significant modifications to the magnetic states-a crossover from ferromagnetism at room temperature for Ge-rich compounds to antiferromagnetism for Si-rich compounds. The compositional dependence of the room temperature lattice parameters exhibits non-linear behaviour around x = 1.2, reflecting the presence of magnetovolume effects. Re-entrant ferromagnetism has been observed …
Ti Substitution For Mn In Mncoge - The Magnetism Of Mn0.9ti0.1coge, Jianli Wang, P Shamba, W D. Hutchinson, M F. Md Din, J C. Debnath, M Avdeev, R Zeng, S J. Kennedy, S J. Campbell, S X. Dou
Ti Substitution For Mn In Mncoge - The Magnetism Of Mn0.9ti0.1coge, Jianli Wang, P Shamba, W D. Hutchinson, M F. Md Din, J C. Debnath, M Avdeev, R Zeng, S J. Kennedy, S J. Campbell, S X. Dou
Shi Xue Dou
Bulk magnetization measurements (5-320 K; 0-8T) reveal that below room temperature Mn0.9Ti0.1CoGe exhibits two magnetic phase transitions at ~178 K and ~280 K. Neutron diffraction measurements (3-350K) confirm that the transition at ~178K is due to the structural change from the low-temperature orthorhombic TiNiSi-type structure to the higher temperature hexagonal Ni2In-type structure while the transition at ~280K originates from the transition from feromagnetism to paramagnetism.
Anisotropy Of Crystal Growth Mechanisms, Dielectricity, And Magnetism Of Multiferroic Bi2femno6 Thin Films, P Liu, Z X. Cheng, Y Du, L Y. Feng, H Fang, Xiaolin Wang, S X. Dou
Anisotropy Of Crystal Growth Mechanisms, Dielectricity, And Magnetism Of Multiferroic Bi2femno6 Thin Films, P Liu, Z X. Cheng, Y Du, L Y. Feng, H Fang, Xiaolin Wang, S X. Dou
Shi Xue Dou
Epitaxial Bi2FeMnO6 (BFMO) thin films deposited on various Nb:SrTiO3 substrates show that the lattice parameters are very sensitive to epitaxial strains. Compressive and tensile strains are induced to the in-plane lattice constants of the (100) and (111) oriented films, respectively, while that of the (110) oriented thin film stay unstrained. The thin films also exhibit a strongly anisotropic growth habit depending on the substrate. Spiral growth, such as in the (100) BFMO film, is unique in samples prepared by pulsed laser deposition. Extrinsic dielectric constants at low frequencies are attributed to oxygen vacancies via the Maxwell-Wagner effect. All the samples …