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Full-Text Articles in Physical Sciences and Mathematics

Atomic Layer Deposition Of Nanolaminate Structures Of Alternating Pbte And Pbse Thermoelectric Films, K. Zhang, A. D. Ramalingom Pillai, K. Bollenbach, D. Nminibapiel, W. Cao, H. Baumgart Jan 2014

Atomic Layer Deposition Of Nanolaminate Structures Of Alternating Pbte And Pbse Thermoelectric Films, K. Zhang, A. D. Ramalingom Pillai, K. Bollenbach, D. Nminibapiel, W. Cao, H. Baumgart

Electrical & Computer Engineering Faculty Publications

For this study PbTe and PbSe thin film nanolaminates have been prepared on silicon substrates with native oxide by Atomic Layer Deposition (ALD) using lead(II)bis(2,2,6,6-tetramethyl-3,5-heptanedionato) (Pb(C11H19O2)(2), (trimethylsilyl) telluride ((Me3Si)2Te) and bis-(triethyl silyl) selane ((Et3Si)2Se) as ALD precursors for lead, tellurium and selenium. The experimental evidence revealed the ALD growth of lead telluride and lead selenide followed the Vollmer-Weber island growth mode. We found a strong dependence of the nucleation process on the temperature. In this paper, we present the optimized conditions for growing PbTe …


Physical Analysis Of Vo2 Films Grown By Atomic Layer Deposition And Rf Magnetron Sputtering, Madhavi Tangirala, Kai Zhang, David Nminibapiel, Venkateswara Pallem, Christian Dussarrat, Wei Cao, Thomas N. Adam, Corbet S. Johnson, Hani E. Elsayed-Ali, Helmut Baumgart Jan 2014

Physical Analysis Of Vo2 Films Grown By Atomic Layer Deposition And Rf Magnetron Sputtering, Madhavi Tangirala, Kai Zhang, David Nminibapiel, Venkateswara Pallem, Christian Dussarrat, Wei Cao, Thomas N. Adam, Corbet S. Johnson, Hani E. Elsayed-Ali, Helmut Baumgart

Electrical & Computer Engineering Faculty Publications

Among the many vanadium suboxides and different stoichiometries, VO2 has received considerable attention due to its remarkable metal-insulator transition (MIT) behavior, which causes a significant reversible change in its electrical and optical properties occurring across the phase transition at 67°C. The initially amorphous VO2 thin films were fabricated by the emerging, Atomic Layer Deposition (ALD) technique with (tetrakis[ethylmethylamino]vanadium) {V(NEtMe)4} as precursor and H2O vapor as oxidation agent. For benchmarking we have also used the RF Magnetron Sputtering technique to deposit metallic vanadium thin films, which were later oxidized during furnace annealing. Post annealing of …


Stability Of High Band Gap P3ht: Pcbm Organic Solar Cells Using Tiox Interfacial Layer, Kurniawan Foe, Gon Namkoong, Matthew Samson, Enas M. Younes, Ilho Nam, Tarek M. Abdel-Fattah Jan 2014

Stability Of High Band Gap P3ht: Pcbm Organic Solar Cells Using Tiox Interfacial Layer, Kurniawan Foe, Gon Namkoong, Matthew Samson, Enas M. Younes, Ilho Nam, Tarek M. Abdel-Fattah

Electrical & Computer Engineering Faculty Publications

We fabricated a poly [3-hexylthiophene] (P3HT) and [6,6] -phenyl-C61-butyric acid methyl ester (PC61BM with the TiOx layer. We found that a solution based TiOx coated at a spin speed of 3000 rpm improved the photon absorption of the active layer. An optimized TiOx layer was also used as the interfacial layer to investigate the stability of P3HT: PC61BM OPC. After 70 days of storage, we observed that the short-circuit current density (JSC) dropped by 16.2%, fill factor (FF) dropped by 10.6%, and power conversion efficiency (PCE) dropped approximately by 25%, while …


Sensor Selection And Integration To Improve Video Segmentation In Complex Environments, Adam R. Reckley, Wei-Wen Hsu, Chung-Hao Chen, Gangfeng Ma, E-Wen Huang Jan 2014

Sensor Selection And Integration To Improve Video Segmentation In Complex Environments, Adam R. Reckley, Wei-Wen Hsu, Chung-Hao Chen, Gangfeng Ma, E-Wen Huang

Electrical & Computer Engineering Faculty Publications

Background subtraction is often considered to be a required stage of any video surveillance system being used to detect objects in a single frame and/or track objects across multiple frames in a video sequence. Most current state-of-the-art techniques for object detection and tracking utilize some form of background subtraction that involves developing a model of the background at a pixel, region, or frame level and designating any elements that deviate from the background model as foreground. However, most existing approaches are capable of segmenting a number of distinct components but unable to distinguish between the desired object of interest and …


Stm Study Of Pulsed Laser Assisted Growth Of Ge Quantum Dot On Si(1 0 0)-(2 × 1), Ali Orguz Er, Hani E. Elsayed-Ali Jan 2014

Stm Study Of Pulsed Laser Assisted Growth Of Ge Quantum Dot On Si(1 0 0)-(2 × 1), Ali Orguz Er, Hani E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Ge quantum dot formation on Si(1 0 0)-(2 × 1) by nanosecond pulsed laser deposition under laser excitation was investigated. Scanning tunneling microscopy was used to probe the growth mode and morphology. Excitation was performed during deposition using laser energy density of 25-100 mJ/cm 2. Faceted islands were achieved at a substrate temperature of ∼250 °C only when using laser excitation. The island morphology changes with increased laser excitation energy density although the faceting of the individual islands remains the same. The size of the major length of islands increases with the excitation laser energy density. A purely electronic …


Polarization Of Bi2te3 Thin Film In A Floating-Gate Capacitor Structure, Hui Yuan, Kai Zhang, Haitao Li, Hao Zhu, John E. Bonevich, Helmut Baumgart, Curt A. Richter, Qiliang Li Jan 2014

Polarization Of Bi2te3 Thin Film In A Floating-Gate Capacitor Structure, Hui Yuan, Kai Zhang, Haitao Li, Hao Zhu, John E. Bonevich, Helmut Baumgart, Curt A. Richter, Qiliang Li

Electrical & Computer Engineering Faculty Publications

Metal-Oxide-Semiconductor (MOS) capacitors with Bi2Te3 thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of the Bi2Te3 thin film while the gate voltage sweeps. The temperature-dependent capacitance measurement indicates that the activation energy is about 0.33 eV for separating the electron and hole pairs in the bulk of Bi2Te3, and driving them to either the top or bottom surface of the thin film. Because of the fast polarization speed, potentially excellent …


Plasma Processes And Polymers Special Issue On: Plasma And Cancer, Mounir Laroussi, Michael Keidar Jan 2014

Plasma Processes And Polymers Special Issue On: Plasma And Cancer, Mounir Laroussi, Michael Keidar

Electrical & Computer Engineering Faculty Publications

During the last two decades, research efforts on the application of low temperature plasmas in biology and medicine have positioned nonequilibrium lowtemperature plasmas as a technology that has the potential of revolutionizing healthcare.[1,2] Low temperature plasmas can be applied in direct contact with living tissues to inactivate bacteria,[3] to disinfect wounds and accelerate wound healing,[4] and to induce damage in some cancer cells.[5–11]


Generator Polynomial Formulation For Parallel Counters With Applications, Lee A. Belfore Ii Jan 2014

Generator Polynomial Formulation For Parallel Counters With Applications, Lee A. Belfore Ii

Electrical & Computer Engineering Faculty Publications

Parallel counters have been studied for several decades as a component in high speed multipliers and multi-operand adder circuits. Using a generator polynomial as a formalism for describing parallel counters in the general case, parallel counter properties can be derived and inferred. Furthermore, the structure and decomposition of the generator polynomial can suggest different implementation strategies. These include simple implementations of (7,3) and (15,4) parallel counters. By grouping factors, the design of a fast (7,3) parallel counter is presented. Finally, the generator polynomial is extended to permit factors of different weights. This extension provides a means for describing the design …


Mathematical Methods Applied To Digital Image Processing, Yi-Hung Liu, Chung Hao Chen, Paul C.P. Chao Jan 2014

Mathematical Methods Applied To Digital Image Processing, Yi-Hung Liu, Chung Hao Chen, Paul C.P. Chao

Electrical & Computer Engineering Faculty Publications

Introduction: Digital image processing (DIP) is an important research area since it spans a variety of applications. Although over the past few decades there has been a rapid rise in this field, there still remain issues to address. Examples include image coding, image restoration, 3D image processing, feature extraction and analysis, moving object detection, and face recognition. To deal with these issues, the use of sophisticated and robust mathematical algorithms plays a crucial role. The aim of this special issue is to provide an opportunity for researchers to publish their latest theoretical and technological achievements in mathematical methods and their …


Robust Calibration Of Cameras With Telephoto Lens Using Regularized Least Squares, Mingpei Liang, Xinyu Huang, Chung-Hao Chen, Gaolin Zheng, Alade Tokuta Jan 2014

Robust Calibration Of Cameras With Telephoto Lens Using Regularized Least Squares, Mingpei Liang, Xinyu Huang, Chung-Hao Chen, Gaolin Zheng, Alade Tokuta

Electrical & Computer Engineering Faculty Publications

Cameras with telephoto lens are usually used to recover details of an object that is either small or located far away from the cameras. However, the calibration of this kind of cameras is not as accurate as the one of cameras with short focal lengths that are commonly used in many vision applications. This paper has two contributions. First, we present a first-order error analysis that shows the relation between focal length and estimation uncertainties of camera parameters. To our knowledge, this error analysis with respect to focal length has not been studied in the area of camera calibration. Second, …