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Energetic Behavior Of Resistive Random-Access Memory Cells, Christopher M. Bisbee
Energetic Behavior Of Resistive Random-Access Memory Cells, Christopher M. Bisbee
Macalester Journal of Physics and Astronomy
In order to investigate the switching characteristics of Resistive Random Access Memory cells (ReRAM) in terms of their thermodynamic free energy properties, we need to build a number of models that replicate the system. This report contains the models used to investigate filament growth patterns based on different boundary conditions applied to the electrode-filament system. Using Comsol Multiphysics software, we determined that when a fixed voltage is applied to each electrode in the electrode-filament system, we should expect filament dissolution that resets our cells into the High Resistance State (HRS). If we instead fix a set amount of charge on …