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Full-Text Articles in Physical Sciences and Mathematics
Gate-Controlled Quantum Dots In Two-Dimensional Tungsten Diselenide And One-Dimensional Tellurium Nanowires, Shiva Davari Dolatabadi
Gate-Controlled Quantum Dots In Two-Dimensional Tungsten Diselenide And One-Dimensional Tellurium Nanowires, Shiva Davari Dolatabadi
Graduate Theses and Dissertations
This work focuses on the investigation of gate-defined quantum dots in two-dimensional transition metal dichalcogenide tungsten diselenide (WSe2) as a means to unravel mesoscopic physical phenomena such as valley-contrasting physics in WSe2 flakes and its potential application as qubit, as well as realizing gate-controlled quantum dots based on elementaltellurium nanostructures which may unlock the topological nature of the host material carriers such as Weyl states in tellurium nanowires.The fabrication and characterization of gate-defined hole quantum dots in monolayer and bilayer WSe2 are reported. The gate electrodes in the device design are located above and below the WSe2 nanoflakes to accumulate …
Growth Of Indium Nitride Quantum Dots By Molecular Beam Epitaxy, Steven P. Minor
Growth Of Indium Nitride Quantum Dots By Molecular Beam Epitaxy, Steven P. Minor
Graduate Theses and Dissertations
Over the last decade, the evolution of the global consciousness in response to decreasing environmental conditions from global warming and pollution has led to an outcry for finding new alternative/clean methods for harvesting energy and determining ways to minimize energy consumption. III-nitride materials are of interest for optoelectronic and electronic device applications such as high efficiency solar cells, solid state lighting (LEDs), and blue laser (Blu-ray Technology) applications. The wide range of direct band gaps covered by its alloys (0.7eV-6.2eV) best illustrates the versatility of III-nitride materials. This wide range has enabled applications extending from the ultraviolet to the near …