Physical Sciences and Mathematics Commons^™

Luminescence In Slipped And Dislocation-Free Laser-Annealed Silicon, R.H. Uebbing, P. Wagner, H. Baumgart, H. J. Queisser

Electrical & Computer Engineering Faculty Publications

Photoluminescence of cw laser-annealed silicon shows a dramatic difference in electronic behavior of the reconstructed material depending upon either creation or suppression of dislocations. Beyond a critical exposure time slip appears, and the luminescence of these samples is dominated by dislocation-related defect levels.