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Physical Sciences and Mathematics Commons™

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Electrical and Computer Engineering

Old Dominion University

1995

Articles 1 - 7 of 7

Full-Text Articles in Physical Sciences and Mathematics

Atomic Broadcast In Heterogeneous Distributed Systems, Osman Zeineldine Oct 1995

Atomic Broadcast In Heterogeneous Distributed Systems, Osman Zeineldine

Computer Science Theses & Dissertations

Communication services have long been recognized as possessing a dominant effect on both performance and robustness of distributed systems. Distributed applications rely on a multitude of protocols for the support of these services. Of crucial importance are multicast protocols. Reliable multicast protocols enhance the efficiency and robustness of distributed systems. Numerous reliable multicast protocols have been proposed, each differing in the set of assumptions adopted, especially for the communication network. These assumptions make each protocol suitable for a specific environment. The presence of different distributed applications that run on different LANs and single distributed applications that span different LANs mandate …

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Electric Field Mapping System With Nanosecond Temporal Rosolution, F. E. Peterkin, R. Block, K. H. Schoenbach Jan 1995

Electric Field Mapping System With Nanosecond Temporal Rosolution, F. E. Peterkin, R. Block, K. H. Schoenbach

Bioelectrics Publications

The electric field dependence of the absorption coefficient in semi‐insulating GaAs at the absorption edge was measured in a high‐voltage pulsed experiment. Pulse duration was kept below 50 ns in order to avoid thermal effects. A GaAs laser diode was used as a probe light source with wavelength varied from 902 to 911 nm. For fields up to 40 kV/cm the absorption coefficient increased from 3 to 17 cm−1 at 902 nm, with smaller absolute increases evident at the longer wavelengths. Calculation from theory was consistent with this behavior. The spatial variation of the electric field was also recorded …

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Supralinear Photoconductivity Of Copper Doped Semi-Insulating Gallium Arsenide, K. H. Schoenbach, R. P. Joshi, F. Peterkin, R. L. Druce Jan 1995

Supralinear Photoconductivity Of Copper Doped Semi-Insulating Gallium Arsenide, K. H. Schoenbach, R. P. Joshi, F. Peterkin, R. L. Druce

Bioelectrics Publications

We report on the intensity dependent supralinear photoconductivity in GaAs:Si:Cu material. The results of our measurements show that the effective carrier lifetime can change over two orders of magnitude with variations in the intensity of the optical excitation. A threshold intensity level has been observed and can be related to the occupancy of the deep copper level. Numerical simulations have also been carried out to analyze the trapping dynamics. The intensity dependent lifetimes obtained from the simulations match the experimental data very well. Finally, based on the nonlinear intensity dependence of the effective lifetimes, a possible low‐energy phototransistor application for …

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Effects Of Large Aspect Ratios And Fluctuations On Hard X-Ray-Detection In Lower Hybrid Driven Divertor Tokamaks, Linda L. Vahala, George Vahala, Paul Bonoli Jan 1995

Effects Of Large Aspect Ratios And Fluctuations On Hard X-Ray-Detection In Lower Hybrid Driven Divertor Tokamaks, Linda L. Vahala, George Vahala, Paul Bonoli

Electrical & Computer Engineering Faculty Publications

It is shown that lower hybrid wave scattering from fluctuations plays a critical role in large aspect ratio divertor plasmas even through the edge density fluctuation levels are only at 1%. This is seen in the theoretically calculated electron power-density profiles which can be directly correlated to the standard experimental chordal hard x-ray profiles. It thus seems that fluctuation effects must be included in determining rf current-density profiles.

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Scanning-Tunneling-Microscopy Study Of Pb On Si(111), D. Tang, H. E. Elsayed-Ali, J. Wendelken, J. Xu Jan 1995

Scanning-Tunneling-Microscopy Study Of Pb On Si(111), D. Tang, H. E. Elsayed-Ali, J. Wendelken, J. Xu

Electrical & Computer Engineering Faculty Publications

Scanning-tunneling microscopy has been used to study temperature and coverage dependence of the structure of lead on the Si(111)-7×7 surface. For low Pb coverage, the Pb atoms favored the faulted sites. The ratio between the number of Pb atoms on faulted to unfaulted sites increased after sample annealing. An energy difference of 0.05 eV associated with a Pb atom on these two sites is estimated. The mobility of Pb atoms on Si(111) was observed at a temperature as low as 260°C for a coverage of 0.1 and 1 ML. © 1995 The American Physical Society.

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Compensation And Characterization Of Gallium Arsenide, Randy A. Roush Jan 1995

Compensation And Characterization Of Gallium Arsenide, Randy A. Roush

Electrical & Computer Engineering Theses & Dissertations

The properties of transition metals in gallium arsenide have been previously investigated extensively with respect to activation energies, but little effort has been made to correlate processing parameters with electronic characteristics. Diffusion of copper in gallium arsenide is of technological importance due to the development of GaAs:Cu bistable photoconductive devices. Several techniques are demonstrated in this work to develop and characterize compensated gallium arsenide wafers. The material is created by the thermal diffusion of copper into silicon-doped GaAs. Transition metals generally form deep and shallow acceptors in GaAs, and therefore compensation is possible by material processing such that the shallow …

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A Diamond Thin Film Flow Sensor, Sacharia Albin, John C. Hagwood, John B. Cooper, David L. Gray, Scott D. Martinson, Michael A. Scott Jan 1995

A Diamond Thin Film Flow Sensor, Sacharia Albin, John C. Hagwood, John B. Cooper, David L. Gray, Scott D. Martinson, Michael A. Scott

Electrical & Computer Engineering Faculty Publications

We present the results of theoretical modeling and experimental testing of a diamond thin film sensor for flow studies. It is shown that the high thermal conductivity of a diamond film can enhance the frequency response of the flow sensor. One-dimensional heat diffusion equation was solved using the finite difference method for determining the frequency response. Two different sensor structures were analyzed: a Ni film on a quartz substrate (Ni/Q) and an intermediate layer of diamond film between the Ni film and quartz substrate (Ni/D/Q). The theoretical model predicts a frequency response for the Ni/D/Q sensor higher than that of …

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