Physical Sciences and Mathematics Commons^™

Properties Of Cu(In,Ga,Al)Se² Thin Films Fabricated By Magnetron Sputtering, Talaat A. Hameed, Wei Cao, Bahiga A. Mansour, Inas K. Elzawaway, El-Metwally M. Abdelrazek, Hani E. Elsayed-Ali

Applied Research Center Publications

Cu (In,Ga,Al)Se₂ (CIGAS) thin films were studied as an alternative absorber layer material to Cu(In_xGa_1-x)Se₂. CIGAS thin films with varying Al content were prepared by magnetron sputtering on Si(100) and soda-lime glass substrates at 350 °C, followed by postdeposition annealing at 520 °C for 5 h in vacuum. The film composition was measured by an electron probe microanalyzer while the elemental depth profiles were determined by secondary ion mass spectrometry. X-ray diffraction studies indicated that CIGAS films are single phase with chalcopyrite structure and that the (112) peak clearly shifts to higher 2θ …

Brust-Schiffrin Synthesis Of Catalytic Bipodal Pdpt Nanoparticles With Some Mechanistic Insights, Sangbum Han, Vara P. Sheela, Wei Cao, Balasubramanian Ramjee

Applied Research Center Publications

Brust–Schiffrin reduction of Pd and Pt precursors in the presence of resorcinarene amine surfactant led to the formation of substantially Pt rich, PdPt bimetallic nanoparticles of a V-shape or variants on the V-shape. New insights into this reaction are provided on the basis of reversed Brust–Schiffrin syntheses, DLS, UV-vis, and NMR analysis. Based on our experiments we conclude that the resorcinarene amine surfactant is part of the inverse micelle formed from TOABr and it also selectively complexes with the Pd salts prior to their reduction. Remarkably, the composition of the bipodal nanoparticles could be varied substantially by varying the reaction …

Metal Modulation Epitaxy Growth For Extremely High Hole Concentrations Above 10(19) Cm(-3) In Gan, Gon Namkoong, Elaissa Trybus, Kyung Keun Lee, Michael Moseley, W. Alan Doolittle, David C. Look

Applied Research Center Publications

The free hole carriers in GaN have been limited to concentrations in the low 10¹⁸ cm⁻³ range due to the deep activation energy, lower solubility, and compensation from defects, therefore, limiting doping efficiency to about 1%. Herein, we report an enhanced doping efficiency up to ~10% in GaN by a periodic doping, metal modulation epitaxy growth technique. The hole concentrations grown by periodically modulating Ga atoms and Mg dopants were over ~1.5 x 10¹⁹ cm⁻³.

© 2008 American Institute of Physics.