Physical Sciences and Mathematics Commons^™

Extraordinary Magnetoresistance In Encapsulated Graphene Devices, Bowen Zhou

Arts & Sciences Electronic Theses and Dissertations

We report a study on the phenomenon of extraordinary magnetoresistance (EMR) in boron nitride encapsulated monolayer graphene devices. Extremely large EMR values–calculated as the change in magnetoresistance, (R(B)–R0)/R0–can be found in these devices due to the vanishingly small resistance values at zero field. In many devices the zero-field resistance can become negative, which enables R0 to be chosen arbitrarily close to zero depending only on measurement precision, resulting in very large EMR. We critically discuss the dependence of EMR on measurement precision and device asymmetry. On the other hand, we also find the largest reported values of the sensitivity to …