Physical Sciences and Mathematics Commons^™

Luminescence And Structural Properties Of Silicon-Germanium Quantum Structures Fabricated By Ion Implantation, Matheus Coelho Adam

Electronic Thesis and Dissertation Repository

The advancement of semiconductor materials has played a crucial role in driving positive technological breakthroughs that impact humanity in numerous ways. The presence of defects significantly alters the physical properties of semiconductors, making their analysis essential in the fabrication of semiconductor devices. I presented a new method to quantify surface and near-surface defects in single crystal semiconductors. Epitaxially-grown silicon was measured by low energy electron diffraction (LEED) to obtain the surface Debye temperature (θ_D). The results showed the surface θ_D of bulk Si (001), 1.0 μm, and 0.6 μm Si on sapphire of 333 K, 299 K, …

Photoluminescence Of Beryllium-Related Defects In Gallium Nitride, Mykhailo Vorobiov, Mykhailo Vorobiov

Theses and Dissertations

This study explores the potential of beryllium (Be) as an alternative dopant to magnesium (Mg) for achieving higher hole concentrations in gallium nitride (GaN). Despite Mg prominence as an acceptor in optoelectronic and high-power devices, its deep acceptor level at 0.22 eV above the valence band limits its effectiveness. By examining Be, this research aims to pave the way to overcoming these limitations and extend the findings to aluminum nitride and aluminum gallium nitride (AlGaN) alloy. Key contributions of this work include. i)Identification of three Be-related luminescence bands in GaN through photoluminescence spectroscopy, improving the understanding needed for further material …

Synthesis, Characterization, And Simulation Of Two-Dimensional Materials, Lawrence Hudy

Theses and Dissertations

ABSTRACT

SYNTHESIS, CHARACTERIZATION, AND SIMULATION OF TWO-DIMENSIONAL MATERIALS

by

Lawrence Hudy

The University of Wisconsin-Milwaukee, 2023Under the Supervision of Professor Michael Weinert

This dissertation focuses on my journey through many aspects of surface science leading to the first principles investigation of transition metal dichalcogenides studying the impact of defects, twist, and decreasing interlayer separation to probe their effect on the electronic properties of these materials. My journey started out learning many aspects of material science such as methods for material synthesis and characterization but later ended on simulation of material properties using density functional theory. In the first experiments, we …

In Situ Study Of Ultrafast Carrier Transport Dynamics In Perovskite Thin-Films, Kanishka Kobbekaduwa

All Dissertations

Perovskites are a novel class of materials that have piqued the interest of researchers in photovoltaics, photodetectors, and optoelectronics. In this study, we measure and elucidate in situ ultrafast carrier dynamics in both organic and inorganic, lead, and non-lead-based halide perovskite thin films using ultrafast photocurrent spectroscopy (UPCS) with a sub-25 ps time resolution. The UPCS technique enables us to define carrier transport dynamics in spatial, temporal, and energy landscapes via measurements at different electric fields, laser intensities, and temperatures. Here we explore and analyze solution-processed bulk MAPbI₃ and nanocrystalline CsPbI₃-based devices and novel non-lead double-layered perovskite …

Optical Studies Of Wide Bandgap Photonic Materials, Nikesh Maharjan

Dissertations, Theses, and Capstone Projects

In this dissertation work, optical properties of wide bandgap materials such as hexagonal Boron Nitride (h-BN) and Zinc Oxide (ZnO) have been studied. Deep UV photoluminescence spectroscopy was employed to study the optical properties of bulk h-BN and powder crystals using a laser of wavelength 200 nm, which is the fourth harmonic of Ti:Sapphire laser as excitation source. The properties and chemical compositions of annealed and unannealed bulk h-BN were investigated. The PL spectra from h-BN samples annealed at 900 ºC in ambient air, had strong phonon assisted band edge emissions along with a sharp atomic-like emission line at 4.09 …

Defects In Ferroelectric Hfo2, A. Chouprik, D. Negrov, E. Y. Tsymbal, A. Zenkevich

Evgeny Tsymbal Publications

No abstract provided.

Current-Driven Production Of Vortex-Antivortex Pairs In Planar Josephson Junction Arrays And Phase Cracks In Long-Range Order, Francisco Estellés-Duart, Miguel Ortuño, Andrés M. Somoza, Valerii M. Vinokur, Alex Gurevich

Physics Faculty Publications

Proliferation of topological defects like vortices and dislocations plays a key role in the physics of systems with long-range order, particularly, superconductivity and superfluidity in thin films, plasticity of solids, and melting of atomic monolayers. Topological defects are characterized by their topological charge reflecting fundamental symmetries and conservation laws of the system. Conservation of topological charge manifests itself in extreme stability of static topological defects because destruction of a single defect requires overcoming a huge energy barrier proportional to the system size. However, the stability of driven topological defects remains largely unexplored. Here we address this issue and investigate numerically …

Defect-Related Magnetic Properties Of Nanostructured Nickel Oxide Thin Films For Solar Cell Applications, Angela E. Ezugwu

Electronic Thesis and Dissertation Repository

Transparent conducting oxides (TCOs) are extensively investigated because of their applications as transparent electrodes in solar cells and light-emitting devices. TCOs of interest include indium-tin oxide, aluminum-doped zinc oxide, nickel oxide (NiO), and their combinations. There is strong interest in NiO because no heteroatoms are required to “dope” it at high transparency levels. It has been speculated that paramagnetic defects due to Ni³⁺ centers and O interstitials are responsible for the electrical conductivity of otherwise insulating and antiferromagnetic NiO, but direct investigation of such defects has been limited. Here, the electrical conductivity in nanostructured NiO thin films is investigated …

Semiconductor Color-Center Structure And Excitation Spectra: Equation-Of-Motion Coupled-Cluster Description Of Vacancy And Transition-Metal Defect Photoluminescence, Jesse J. Lutz, Xiaofeng F. Duan, Larry W. Burggraf

Faculty Publications

Valence excitation spectra are computed for deep-center silicon-vacancy defects in 3C, 4H, and 6H silicon carbide (SiC), and comparisons are made with literature photoluminescence measurements. Optimizations of nuclear geometries surrounding the defect centers are performed within a Gaussian basis-set framework using many-body perturbation theory or density functional theory (DFT) methods, with computational expenses minimized by a QM/MM technique called SIMOMM. Vertical excitation energies are subsequently obtained by applying excitation-energy, electron-attached, and ionized equation-of-motion coupled-cluster (EOMCC) methods, where appropriate, as well as time-dependent (TD) DFT, to small models including only a few atoms adjacent to the defect center. We consider the …

Cathodoluminescence Studies Of Defects In Coated Boron Nitride, Kévin Guerch, Justin Dekany, Jr Dennison, Thierry Paulmier, Sophie Guillemet-Fritsch, Pascal Lenormand

Journal Articles

Optical emission properties of Boron Nitride (BN) substrates, BN with alumina (Al2O3) coating, and thermally-annealed alumina-coated boron nitride (an-BN/Al2O3) were investigated under electron irradiation using cathodoluminescence (CL) measurements. Tests were performed temperatures ranging from ~100 K to ~300 K, with monoenergetic beams from 5 keV to 30 keV, and electron flux densities from 1 nA.cm-2 to 500 nA.cm-2. These experiments were conducted to identify the effects of coating and thermal annealing on the nature and occupation of defect states in different samples with BN substrates. Previous studies have shown that these treatments can limit the charging of BN substrates. Consequently, …

Influence Of Quantum Dot Structure On The Optical Properties Of Group Iv Materials Fabricated By Ion Implantation, Eric G. Barbagiovanni

Electronic Thesis and Dissertation Repository

In nanostructures (NSs), to acquire a fundamental understanding of the electronic states by studying the optical properties is inherently complicated. A widely used simplification to this problem comes about by developing a model for a small scale representation of types of NSs and applying it to a hierarchy of fabrication methods. However, this methodology fails to account for structural differences incurred by the fabrication method that lead to differences in the optical properties. Proper modelling is realized by first considering the proper range of experimental parameters individually as inputs to a theoretical model and applying the correct parameters to the …