Open Access. Powered by Scholars. Published by Universities.®
Physical Sciences and Mathematics Commons™
Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 2 of 2
Full-Text Articles in Physical Sciences and Mathematics
Short Terahertz Pulses From Semiconductor Surfaces: The Importance Of Bulk Difference‐Frequency Mixing, Peter N. Saeta, Benjamin I. Greene, Shun Lien Chuang
Short Terahertz Pulses From Semiconductor Surfaces: The Importance Of Bulk Difference‐Frequency Mixing, Peter N. Saeta, Benjamin I. Greene, Shun Lien Chuang
All HMC Faculty Publications and Research
The crystallographic orientation dependence of the far‐infrared (FIR) light generated at the (001) surface of a zincblende semiconductor is shown to derive principally from bulk difference‐frequency mixing. A strong modulation is observed for 1‐GW/cm2 pulses on InP, which demonstrates that the radiated FIR wave produced by bulk optical rectification is comparable to that generated by the transport of photoinjected carriers. Using the bulk rectification light as a clock, we show that more than 95% of the light produced from an InP (111) crystal by 100‐fs, 100‐μJ pulses is generated in a time shorter than the excitation pulse.
Primary Relaxation Processes At The Band Edge Of Sio₂, Peter N. Saeta, Benjamin I. Greene
Primary Relaxation Processes At The Band Edge Of Sio₂, Peter N. Saeta, Benjamin I. Greene
All HMC Faculty Publications and Research
The kinetics of photoinduced defect formation in high-purity silicas has been studied by femtosecond transient absorption spectroscopy in the visible and ultraviolet. Band edge two-photon excitation produces singlet excitons which decay in 0.25 ps into defects with the absorption spectra of nonbridging oxygen hole centers (≡Si-O⋅) and silicon E’ centers (≡Si⋅). We identify these defect pairs with the self-trapped triplet exciton and the 0.25 ps decay with the motion of the photoexcited oxygen atom. Similar results were obtained with both crystalline and amorphous silica samples.