Physical Sciences and Mathematics Commons^™

Low Pressure Chemical Vapor Deposition (Lpcvd) Of Silicon Carbide From Diethylsilane, Yi-Tong Shi

Theses

The depositions of amorphous and cubic-crystal SiC from a new chemical vapor deposition source, diethylsilane(DES), have been studied. Amorphous SiC thin films and crystalline cubic-SiC materials have been deposited on silicon wafers at temperature lower and higher than 850C, respectively. The activation energy and a reaction mechanism involving the production and subsequent desorption of diethylsilene has been suggested, which explains the observed deposition dependency with the temperature and reactor pressure. A model based on the polymerization of DES is offered and the deposition rate is found to be the result of a large number of simultaneously occuring deposition processes for …