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Full-Text Articles in Physical Sciences and Mathematics
The Effect Of Atomic Hydrogen On The Growth Of Gallium Nitride By Molecular Beam Epitaxy, Zhonghai Yu, S. L. Buczkowski, N. C. Giles, T. H. Myers, Michelle Richards-Babb
The Effect Of Atomic Hydrogen On The Growth Of Gallium Nitride By Molecular Beam Epitaxy, Zhonghai Yu, S. L. Buczkowski, N. C. Giles, T. H. Myers, Michelle Richards-Babb
Faculty & Staff Scholarship
GaN was grown by molecular beam epitaxy using an rf plasma source. Growth under gallium‐rich conditions at 730 °C was required to produce high quality layers as indicated by photoluminescence, Hall effect, atomic force microscopy, and x‐ray diffraction measurements. Atomic hydrogen has a significant effect for Ga‐rich growth, increasing growth rates by as much as a factor of 2.
Valence-Band Electronic Structure Of Mos2 And Cs/Mos2(0002) Studied By Angle-Resolved X-Ray Photoemission Spectroscopy, Michelle Richards-Babb
Valence-Band Electronic Structure Of Mos2 And Cs/Mos2(0002) Studied By Angle-Resolved X-Ray Photoemission Spectroscopy, Michelle Richards-Babb
Faculty & Staff Scholarship
The angle dependence of the valence-band photoemission from the trigonal prismatic layered MoS2shows both the forward-scattering features normally observed in core-level photoelectron diffraction and, in addition, the initial-state orbital character associated with partially occupied, nonbonding MoIV(4dz2+4dx2−y2 +4dxy) orbitals near the top of the valence band. The difference in forward scattering between the Mo and S emitters is also used to assess relative contributions from the Mo and S atomic orbitals at specific binding energies within the valence band. Deposition of cesium (0.23 ML Cs with 1 ML equal to the Cs saturation coverage) onto the basal plane of MoS2 …
Nucleation And Growth Of Gan On Sapphire By Mbe, Steven Buczkowski
Nucleation And Growth Of Gan On Sapphire By Mbe, Steven Buczkowski
Graduate Theses, Dissertations, and Problem Reports
GaN was grown by molecular beam epitaxy in an effort to determine nucleation and growth conditions which lead to high quality, single-crystal films. Atomic force microscopy (AFM) was used to show that growth under Ga-rich conditions promotes the nucleation of films with large nucleation domains leading to a lower density of intrinsic defects related to domain boundaries. These conditions are also shown to promote a 2-D growth mode resulting in films with a high degree of nucleation domain coalescence and surface roughnesses below 2 nm. Addition of atomic hydrogen, using a thermally-cracked source, is shown to increase the growth rate …