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Articles 1 - 9 of 9
Full-Text Articles in Physical Sciences and Mathematics
Electronic Structure Of Lithium Tetraborate, David J. Wooten
Electronic Structure Of Lithium Tetraborate, David J. Wooten
Theses and Dissertations
Due to interest as neutron detection material, an investigation of Li2B4O7(110) and Li2B4O7(100) was undertaken, utilizing photoemission and inverse photoemission spectroscopic techniques. The measured band gap depended on crystallographic direction with the band gaps ranging from 8.9±0.5 eV to 10.1±0.5 eV. The measurement yielded a density of states that qualitatively agreed with the theoretical results from model bulk band structure calculations for Li2B4O7; albeit with a larger band gap than predicted, but consistent with the known deficiencies of LDA and DFT calculations. …
Changes To Electrical Conductivity In Irradiated Carbon-Nickel Nanocomposites, David F. Coy
Changes To Electrical Conductivity In Irradiated Carbon-Nickel Nanocomposites, David F. Coy
Theses and Dissertations
Pre and post irradiation resistivity and XAFS measurements have been conducted to examine the effects of 0.5 MeV electron irradiations on nickel-carbon composites. Results showed a decrease in surface resistivity in all sample types of 14-30% following irradiation with a total electron exposure of 4 x 10-16 cm-2. Results also showed a corresponding decrease in NiO content for the irradiated samples as compared to measurements of non-irradiated samples. Surface resistivity measurement capabilities were established and measurement techniques refined to produce repeatable results of sufficient precision to discern changes in resistivity for an exposure of 2 x 10 …
Optical Properties Of Si, Ge, Gaas, Gasb, Inas, And Inp At Elevated Temperatures, Thomas R. Harris
Optical Properties Of Si, Ge, Gaas, Gasb, Inas, And Inp At Elevated Temperatures, Thomas R. Harris
Theses and Dissertations
Investigation of the optical and electrical behavior of some semiconductors at very high temperatures has not been an area of much study, at least not experimentally. The importance of such research becomes obvious due to the effects of high temperatures on semiconductor devices such as infrared detectors and light emitters. Besides the destructive effects of thermal stress and melting, changes in the optical properties of the material can greatly affect device performance. In this research, the infrared absorption of Si, Ge, GaAs, GaSb, InAs, and InP was measured from 0.6 to 25 μm at temperatures ranging from 295 up to …
Improved Modeling Of Midlatitude D-Region Ionospheric Absorption Of High Frequency Radio Signals During Solar X-Ray Flares, Evelyn A. Schumer
Improved Modeling Of Midlatitude D-Region Ionospheric Absorption Of High Frequency Radio Signals During Solar X-Ray Flares, Evelyn A. Schumer
Theses and Dissertations
The purpose of this research was to improve modeling of midlatitude D-region ionospheric absorption of high frequency radio signals during solar X-ray flares through analysis of HF propagation data obtained during the HF Investigation of D-region Ionospheric Variation Experiment (HIDIVE) and obtained at the Canadian Space Agency NORSTAR riometer in Pinawa, Manitoba, Canada and X-ray flux data, as reported by GOES satellites. The findings of the data analysis were then used to validate and suggest improvements for two existing HF absorption models, the operational Space Weather Prediction Center (SWPC) D-region Absorption model and the physical AbbyNormal model. Analysis of the …
Calculation Of Collisional Cross Sections For The ²P3/2 > ²P1/2 Transition In Alkali-Noble Gas Systems, Samuel D. Butler
Calculation Of Collisional Cross Sections For The ²P3/2 > ²P1/2 Transition In Alkali-Noble Gas Systems, Samuel D. Butler
Theses and Dissertations
Collisional cross sections were calculated as a function of energy for two coupled one dimensional, spherically symmetric potentials. The Split Operator Method was used to propagate an initial Moller state, chosen to be a Gaussian in the asymptotic limit, through a potential. The correlation between the wave packet and Moller final state was calculated at each time step. Using the Channel Packet Method, the correlation function was used to obtain scattering matrix elements. From scattering matrix elements for several different effective potential values and using the Method of Partial Waves, the collisional cross section is calculated for the transition from …
Three Dimensional Positron Annihilation Momentum Measurement Technique (3dpamm) Applied To Measure Oxygen-Atom Defects In 6h Silicon Carbide, Christopher S. Williams
Three Dimensional Positron Annihilation Momentum Measurement Technique (3dpamm) Applied To Measure Oxygen-Atom Defects In 6h Silicon Carbide, Christopher S. Williams
Theses and Dissertations
A three-dimensional Positron Annihilation Spectroscopy System (3DPASS) capable to simultaneously measure three-dimensional electron-positron (e--e+) momentum densities measuring photons derived from e--e+ annihilation events was designed and characterized. 3DPASS simultaneously collects a single data set of correlated energies and positions for two coincident annihilation photons using solid-state double-sided strip detectors (DSSD). Positions of photons were determined using an interpolation method which measures a figure-of-merit proportional to the areas of transient charges induced on both charge collection strips directly adjacent to the charge collection strips interacting with the annihilation photons. The subpixel resolution was measured for both double-sided strip detectors (DSSD) and …
Experimental Validation Techniques For The Heleeos Off-Axis Laser Propagation Model, John D. Haiducek
Experimental Validation Techniques For The Heleeos Off-Axis Laser Propagation Model, John D. Haiducek
Theses and Dissertations
The High Energy Laser End-to-End Operational Simulation (HELEEOS) off-axis scattering algorithm is designed to predict the irradiance that will be detected at a given off-axis location due to atmospheric scattering of a high-energy laser. The HELEEOS system models the propagation of the laser through the atmosphere, accounting for such effects as turbulence, thermal blooming, and atmospheric absorption. The HELEEOS off-axis scattering algorithm uses the scattering phase functions of the Mie scattering models to predict the amount of radiation that will be scattered toward a particular observation location from each point along the beam path, and the total irradiance that will …
The Material Properties Of Cssnbr3 And Csbr:Sn-1% And Their Potential As Scintillator Detector Material, Neal B. Kleinschmidt
The Material Properties Of Cssnbr3 And Csbr:Sn-1% And Their Potential As Scintillator Detector Material, Neal B. Kleinschmidt
Theses and Dissertations
The search for superior nuclear radiation detection materials is ongoing. Current scintillator materials using Thallium doped Sodium Iodide or Cesium Iodide are the benchmarks for ease of use and quick identification of isotope species. This research aims to explore Cesium Bromide doped with 1% molar tin (CsBr:Sn-1%) and Cesium Tin Bromide (CsSnBr3) as candidate materials for a new scintillator. The techniques of Extended X-Ray Absorption Fine Structure (EXAFS), X-Ray Absorption Near Edge Structure (XANES) and Cathodoluminescence are used to determine the suit- ability of CsSnBr3 and CsBr:Sn-1% with Sn4+ as a potential scintillator materials and explore their …
In-Situ, Gate Bias Dependent Study Of Neutron Irradiation Effects On Algan/Gan Hfets, Janusz K. Mikina
In-Situ, Gate Bias Dependent Study Of Neutron Irradiation Effects On Algan/Gan Hfets, Janusz K. Mikina
Theses and Dissertations
AlGaN/GaN Heterostructure Field Effect Transistors (HFETs) have come under increased study in recent years due to their highly desirable material and electrical properties and survivability even during and after exposure to extreme temperature and radiation environments. In this study, unpassivated and SiN passivated Al0.27Ga0.73N/GaN HFETs were subjected to neutron radiation at 120 K. The primary focus of the research was the effects of neutron irradiation on drain current, gate leakage current, threshold voltage shift, gate-channel capacitance, and the effects of biasing the gate during irradiation. In-situ measurements were conducted on transistor current, gate-channel capacitance, and gate …