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Full-Text Articles in Physical Sciences and Mathematics
Data For Dopant-Induced Energetic Disorder In Conjugated Polymers: Determinant Roles Of Polymer-Dopant Distance And Composite Electronic Structures, Michael Lu Diaz, Muhamed Duhandzic, Simon Harrity, Subhayan Samanta, Zlatan Aksamija, Dhandapani Venkataraman
Data For Dopant-Induced Energetic Disorder In Conjugated Polymers: Determinant Roles Of Polymer-Dopant Distance And Composite Electronic Structures, Michael Lu Diaz, Muhamed Duhandzic, Simon Harrity, Subhayan Samanta, Zlatan Aksamija, Dhandapani Venkataraman
Data and Datasets
The data here is the raw data for Figures in the publication "Dopant-Induced Energetic Disorder in Conjugated Polymers: Determinant Roles of Polymer−Dopant Distance and Composite Electronic Structures" In the Journal of Physical Chemistry C. (https://doi.org/10.1021/acs.jpcc.3c07197)
Data For "Interplay Between Ion Transport, Applied Bias And Degradation Under Illumination In Hybrid Perovskite P-I-N Devices", Emily C. Smith, Christie L.C. Ellis, Hamza Javaid, Lawrence A. Renna, Yao Liu, Thomas P. Russell, Monojit Bag, Dhandapani Venkataraman
Data For "Interplay Between Ion Transport, Applied Bias And Degradation Under Illumination In Hybrid Perovskite P-I-N Devices", Emily C. Smith, Christie L.C. Ellis, Hamza Javaid, Lawrence A. Renna, Yao Liu, Thomas P. Russell, Monojit Bag, Dhandapani Venkataraman
Data and Datasets
We studied ion transport in hybrid organic inorganic perovskite p-i-n devices as a function of applied bias under device operating conditions. Using electrochemical impedance spectroscopy (EIS) and equivalent circuit modeling, we elucidated various resistive and capacitive elements in the device. We show that ion migration is predictably influenced by a low applied forward bias, characterized by an increased capacitance at the hole transporting (HTM) and electron transporting material (ETM) interfaces, as well as through the bulk. However, unlike observations in n-i-p devices, we found that there is a capacitive discharge leading to ion redistribution in the bulk at high forward …