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Full-Text Articles in Engineering
Three-Dimensional Memristor Integrated Circuits And Applications, Peng Lin
Three-Dimensional Memristor Integrated Circuits And Applications, Peng Lin
Doctoral Dissertations
New computing paradigms are highly demanded in the “Big Data” era to efficiently process, store and extract useful information from overwhelmingly rich amount of data. New computing systems based on large scale memristor circuits emerges as a very promising candidate due to its capability to both store and process information, thus eliminating the von Neumann bottleneck in the conventional complementary metal oxide semiconductor (CMOS) based computers. As the lateral scaling of the device geometry approaching its physical limit, three-dimensional stacking of multiple device layers becomes necessary to further increase the packing density. Moreover, innovations in the 3D circuits design can …
Characterization Of Electronic And Ionic Transport In Soft And Hard Functional Materials, Lawrence A. Renna
Characterization Of Electronic And Ionic Transport In Soft And Hard Functional Materials, Lawrence A. Renna
Doctoral Dissertations
Control over concurrent transport of multiple carrier types is desired in both soft and hard materials. For both types of materials, I demonstrate ways to characterize and execute governance over both electronic and ionic transport, and apply these concepts in the fabrication of devices with applications in conducting composites, photovoltaics, electrochemical energy storage, and memristors. In soft materials, such as polymers, the topology of the binary polymer mesoscale morphology has major implications on the charge/ion transport. Traditional approaches to co-continuous structures involve either using blends of polymers or diblock copolymers. In polymer blends, the structures are kinetically trapped and …
High Performance Silver Diffusive Memristors For Future Computing, Rivu Midya
High Performance Silver Diffusive Memristors For Future Computing, Rivu Midya
Masters Theses
Sneak path current is a significant remaining obstacle to the utilization of large crossbar arrays for non-volatile memories and other applications of memristors. A two-terminal selector device with an extremely large current-voltage nonlinearity and low leakage current could solve this problem. We present here a Ag/oxide-based threshold switching (TS) device with attractive features such as high current-voltage nonlinearity (~1010), steep turn-on slope (less than 1 mV/dec), low OFF-state leakage current (~10-14 A), fast turn ON/OFF speeds (<75/250 ns), and good endurance (>108 cycles). The feasibility of using this selector with a typical memristor has been demonstrated by physically integrating them …