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Tin/Hfo2/Sio2/Si Gate Stacks Reliability : Contribution Of Hfo2 And Interfacial Sio2 Layer, Nilufa Rahim

Dissertations

Hafnium Oxide based gate stacks are considered to be the potential candidates to replace SiO₂ in complementary metal-oxide-semiconductor (CMOS), as they reduce the gate leakage by over 100 times while keeping the device performance intact. Even though considerable performance improvement has been achieved, reliability of high-κ devices for the next generation of transistors (45nm and beyond) which has an interfacial layer (IL: typically SiO₂) between high-κ and the substrate, needs to be investigated. To understand the breakdown mechanism of high-κ/SiO₂ gate stack completely, it is important to study this multi-layer structure extensively. For example, (i) the …