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Articles 1 - 7 of 7
Full-Text Articles in Engineering
Study Of Sac Solder Interconnect Parameters In Microelectronic Semiconductor Packaging And Their Effects On Electromigration Failure Mechanisms, Allison Theresa Osmanson
Study Of Sac Solder Interconnect Parameters In Microelectronic Semiconductor Packaging And Their Effects On Electromigration Failure Mechanisms, Allison Theresa Osmanson
Material Science and Engineering Dissertations
As the shrinkage of electronic devices becomes more appealing, so do their high capacity and efficiency. This demand for ever-shrinking sizes of electronic devices follows the trend predicted by Moore’s Law. To achieve smaller devices, reduced sizes of solder joints, Cu traces, Cu pads, and other components in packages are implemented with tighter tolerances for geometries and layouts. With each incremental change in dimension or material, new reliability challenges emerge. Electromigration (EM), the directional diffusion of atoms with the flow of electrons, has been an inevitable reliability concern for microelectronic device packaging. It is one common failure mechanism in wafer-level …
Study Of Thick Indium Gallium Nitride Graded Structures For Future Solar Cell Applications, Manal Abdullah Aldawsari
Study Of Thick Indium Gallium Nitride Graded Structures For Future Solar Cell Applications, Manal Abdullah Aldawsari
Graduate Theses and Dissertations
Indium gallium nitride (InxGa1-xN) materials have held great potential for the optoelectronic industry due to their electrical and optical properties. The tunable band gap that can span the solar spectrum was one of the most significant features that attracted researchers’ attention. The band gap can be varied continuously from 0.77 eV for InN to 3.42 eV for GaN, covering the solar spectrum from near infrared to near ultraviolet. Additionally, it has a high absorption coefficient on the order of ∼105 cm−1, a direct band gap, high radiation resistance, thermal stability, and so on. Nevertheless, the epitaxial growth of high quality …
Advanced Organic Polymers For The Nanoscale Fabrication Of Fiber-Based Electronics Using The Electrospinning Technique, William Serrano Garcia
Advanced Organic Polymers For The Nanoscale Fabrication Of Fiber-Based Electronics Using The Electrospinning Technique, William Serrano Garcia
USF Tampa Graduate Theses and Dissertations
Electrospinning has become one of the most interesting techniques for fabricating nanofibers for multiple applications. The high surface-to-volume ratio nanofibers offer make the perfect structure for filters, sensors, and fiber-based electronics that could lead to a wide range of flexible electronics applications. This technique makes organic semiconducting polymers a promising alternative for single fiber electronics structures. Indeed, a wide variety of structures can be fabricated using electrostatic techniques for polymer manipulation from droplets, fibers, and coaxial structures. Although techniques such as electrospinning led the use of electrostatic forces to generate fibers of a precursor solution, electrospinning requires large enough polymer …
Design And Characterization Of Standard Cell Library Using Finfets, Phanindra Datta Sadhu
Design And Characterization Of Standard Cell Library Using Finfets, Phanindra Datta Sadhu
Master's Theses
The processors and digital circuits designed today contain billions of transistors on a small piece of silicon. As devices are becoming smaller, slimmer, faster, and more efficient, the transistors also have to keep up with the demands and needs of the daily user. Unfortunately, the CMOS technology has reached its limit and cannot be used to scale down due to the transistor's breakdown caused by short channel effects. An alternative solution to this is the FinFET transistor technology, where the gate of the transistor is a three dimensional fin that surrounds the transistor and prevents the breakdown caused by scaling …
Effect Of Dopants On The Properties And Performance Of Gallium Oxide: Bulk Ceramics And Nanomaterials, Vishal Bhimrao Zade
Effect Of Dopants On The Properties And Performance Of Gallium Oxide: Bulk Ceramics And Nanomaterials, Vishal Bhimrao Zade
Open Access Theses & Dissertations
A comprehensive investigation performed in order to understand the fundamental aspects of transition metal (TM) incorporation into Ga2O3, a wide band gap semiconductor with a huge potential for application in electronics, optics, micromechanics and optoelectronics. An approach is presented to tailor the structural, optical, electrical, mechanical properties of Ga2O3 ceramics and thin films. The tungsten (W) mixed Ga2O3 with variable W at% (Ga2-2xWxO3 ; 0.00 ≤ x ≤ 0.30) were synthesized by the high temperature solid state route involving a 2-step calcination process. The solubility limits and phase stability of the compounds are established. While solubility and phase stability occur …
Characterization Of Gesn Semiconductors For Optoelectronic Devices, Hryhorii Stanchu
Characterization Of Gesn Semiconductors For Optoelectronic Devices, Hryhorii Stanchu
Graduate Theses and Dissertations
Germanium-tin alloys with Sn compositions higher than 8 at. % to 10 at. % have recently attracted significant interest as a group IV semiconductor that is ideal for active photonics on a Si substrate. The interest is due to the fact that while at a few percent of Sn, GeSn is an indirect bandgap semiconductor, at about 8 to 10 at. % Sn, GeSn transitions to a direct bandgap semiconductor. This is at first surprising since the solid solubility of Sn in Ge under equilibrium growth conditions is limited to only about 1 at. %. However, under non-equilibrium growth conditions, …
Si-Based Germanium Tin Photodetectors For Infrared Imaging And High-Speed Detection, Huong Tran
Si-Based Germanium Tin Photodetectors For Infrared Imaging And High-Speed Detection, Huong Tran
Graduate Theses and Dissertations
Infrared (IR) radiation spans the wavelengths of the windows: (1) near-IR region ranging from 0.8 to 1.0 μm, (2) shortwave IR (SWIR) ranging from 1.0 to 3.0 μm, (3) mid-wave IR (MWIR) region covering from 3.0 to 5.0 μm, (4) longwave IR (LWIR) spanning from 8.0 to 12.0 μm, and (5) very longwave IR extending beyond 12.0 μm. The MWIR and LWIR regions are important for night vision in the military, and since the atmosphere does not absorb at these wavelengths, they are also used for free-space communications and astronomy. Automotive and defect detection in the food industry and electronic …