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Full-Text Articles in Engineering
Modeling Of Thermally Aware Carbon Nanotube And Graphene Based Post Cmos Vlsi Interconnect, K M Mohsin
Modeling Of Thermally Aware Carbon Nanotube And Graphene Based Post Cmos Vlsi Interconnect, K M Mohsin
LSU Doctoral Dissertations
This work studies various emerging reduced dimensional materials for very large-scale integration (VLSI) interconnects. The prime motivation of this work is to find an alternative to the existing Cu-based interconnect for post-CMOS technology nodes with an emphasis on thermal stability. Starting from the material modeling, this work includes material characterization, exploration of electronic properties, vibrational properties and to analyze performance as a VLSI interconnect. Using state of the art density functional theories (DFT) one-dimensional and two-dimensional materials were designed for exploring their electronic structures, transport properties and their circuit behaviors. Primarily carbon nanotube (CNT), graphene and graphene/copper based interconnects were …
Modeling Of Two Dimensional Graphene And Non-Graphene Material Based Tunnel Field Effect Transistors For Integrated Circuit Design, Md Shamiul Fahad
Modeling Of Two Dimensional Graphene And Non-Graphene Material Based Tunnel Field Effect Transistors For Integrated Circuit Design, Md Shamiul Fahad
LSU Doctoral Dissertations
The Moore’s law of scaling of metal oxide semiconductor field effect transistor (MOSFET) had been a driving force toward the unprecedented advancement in development of integrated circuit over the last five decades. As the technology scales down to 7 nm node and below following the Moore’s law, conventional MOSFETs are becoming more vulnerable to extremely high off-state leakage current exhibiting a tremendous amount of standby power dissipation. Moreover, the fundamental physical limit of MOSFET of 60 mV/decade subthreshold slope exacerbates the situation further requiring current transport mechanism other than drift and diffusion for the operation of transistors. One way to …
Study Of Mos2 And Graphene-Based Heterojunctions For Electronic And Sensing Applications, Ifat Jahangir
Study Of Mos2 And Graphene-Based Heterojunctions For Electronic And Sensing Applications, Ifat Jahangir
Theses and Dissertations
Since the discovery of graphene, there has been an increase in two-dimensional (2D) materials research for their scalability down to atomic dimensions. Among the analogs of graphene, transition metal dichalcogenides (TMDs) are attractive due to their exceptional electronic and optoelectronic properties. MoS2, a TMD, has several advantages over graphene and the industry workhorse Si, and has been reported to demonstrate excellent transistor performances. The key obstacle in the commercialization of MoS2 technology is low carrier mobility over large areas for top-down devices. Although there were several early reports on synthesis of atomically thin MoS2 with moderate mobility, transferring large area …
Aperiodic Multilayer Graphene Based Tunable And Switchable Thermal Emitter At Mid-Infrared Frequencies, Safura Sharifi
Aperiodic Multilayer Graphene Based Tunable And Switchable Thermal Emitter At Mid-Infrared Frequencies, Safura Sharifi
LSU Master's Theses
Over the past few decades, there have been tremendous innovations in electronics and photonics. The development of these ultra-fast growing technologies mostly relies on fundamental understanding of novel materials with unique properties as well as new designs of device architectures with more diverse and better functionalities. In this regard, the promising approach for next-generation nanoscale electronics and photonics is to exploit the extraordinary characteristics of novel nanomaterials. There has been an explosion of interest in graphene for photonic applications as it provides a degree of freedom to manipulate electromagnetic waves. In this thesis, to tailor the broadband blackbody radiation, new …
Photo-Effects On Current Transport In Back-Gate Graphene Field-Effect Transistor, Xinlu Chen
Photo-Effects On Current Transport In Back-Gate Graphene Field-Effect Transistor, Xinlu Chen
LSU Master's Theses
Graphene, which has attracted wide attention because of its two-dimensional structure and high carrier mobility, is a promising candidate for potential application in optics and electronics. In this dissertation, the photonic effects on current transport in back-gate graphene field-effect transistor is investigated. Chemical vapor deposition (CVD) on metal provides a promising way for large area, controllability and high quality graphene film. The transfer and back-gate transistor fabrication processes are proposed in this dissertation. The theoretical analysis of photodetector based on back-gate graphene field-effect transistor has been done. It is shown that the photo-electronic current consists of current contributions from photovoltaic, …