Engineering Commons^™

Fabrication And Characterization Of Gated Silicon Field Emission Micro Triodes, Nanchou Liu

Dissertations

This dissertation describes the fabrication technology and characterization of a gated silicon field emission micro triode that is a novel electron tunneling device for generating electron emission into a vacuum. Conic (point) and wedge field emitter structures with nm-scale radii were fabricated in silicon and GaAs by etching, MOCVD and dry oxidation. A new self-aligned process was developed for fabrication of vertical field emission triodes. This process allows control of gate opening to less than 0.5 μm diameter without the need of electron-beam writing. It also provides a planar gate electrode and a thick dielectric layer for reduction of the …

Performance Evaluation Of Spread Spectrum System With Cochannel Interference Through A Nonlinear Channel, Yong H. Kim

Dissertations

This thesis deals with the problem of more than one subscriber transmitting data signals through a common satellite repeater using code division multiplexing to separate the signals. We are concerned with the problem of amplifying two DS spread spectrum signals, both QPSK or BPSK modulated, in a common device in which limiting occurs. One signal is considered the signal we desire to receive, and the other, having the same nominal carrier frequency with a small random offset, is considered to be a cochannel interferer. The case of a cochannel interferer on the uplink and downlink in QPSK signalling and BPSK …

Process Technology And Characterization For Field Emission Devices, Jong Min Kim

Dissertations

Vacuum microelectronics is a new research field which applies semiconductor process technology to the fabrication of micron-dimensioned electron devices. Vacuum microelectronics is made possible by advances in microstructures and nanofabrication technology. Vacuum microelectronic devices are further characterized by a wide operating temperature range, nuclear radiation immunity, higher emission current density potential, and lower power consumption than that of thermionic emitters. The low mass of the electron provides a higher carrier mobility than GaAs or any solid state device. These features offer the potentials for wide variety of applications.

In this dissertation. electron field emission structures applicable to a variety of …

Investigation Of Epitaxial Lift-Off Gaas And Langmuir-Blodgett Films For Optoelectronic Device Applications, Divyang M. Shah

Dissertations

Epitaxial lift-off (ELO), a technique of removing an epitaxially grown GaAs layer from its growth substrate by selective etching of an AlAs sacrificial layer, is described for field-effect transistor fabrication independent of the GaAs growth substrate. Metal Semiconductor Field-Effect Transistors (MESFETs) and High Electron Mobility Transistors (HEMTs) fabricated on silicon and sapphire substrates using ELO are investigated. A 0.1 μm gate length depletion mode MESFET made on silicon exhibited a unity current gain frequency f_t = 34 GHz. Excellent device isolation with subpicoampere leakage currents is obtained. A high input impedance amplifier has been implemented on silicon substrate using …