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Bismuth Surfactant Effects For Gaasn And Beryllium Doping Of Gaasn Grown By Molecular Beam Epitaxy, Ting Liu
Bismuth Surfactant Effects For Gaasn And Beryllium Doping Of Gaasn Grown By Molecular Beam Epitaxy, Ting Liu
Graduate Theses, Dissertations, and Problem Reports
Bi was investigated as a possible surfactant for growth of GaAs1-xNx layers on (100) GaAs substrates by molecular beam epitaxy using an RF plasma nitrogen source. Bi extends the useable growth conditions producing smoother surfaces to a significantly higher N content than without Bi. The conductivity of Be-doped GaAsN decreased significantly with increasing N concentration. Temperature dependent Hall measurement suggests possible compensation and increased activation energy. SIMS and Raman measurements indicate that the N composition increased by introducing Be, and for low [N], Bi. The addition of Bi during growth of Be-doped GaAsN only produced semi-insulating layers.
GaAs1-xNx layers and …