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Study Of Radiation Effects In Gan-Based Devices, Han Gao
Study Of Radiation Effects In Gan-Based Devices, Han Gao
Electrical Engineering Theses and Dissertations
Radiation tolerance of wide-bandgap Gallium Nitride (GaN) high-electron-mobility transistors (HEMT) has been studied, including X-ray-induced TID effects, heavy-ion-induced single event effects, and neutron-induced single event effects. Threshold voltage shift is observed in X-ray irradiation experiments, which recovers over time, indicating no permanent damage formed inside the device. Heavy-ion radiation effects in GaN HEMTs have been studied as a function of bias voltage, ion LET, radiation flux, and total fluence. A statistically significant amount of heavy-ion-induced gate dielectric degradation was observed, which consisted of hard breakdown and soft breakdown. Specific critical injection level experiments were designed and carried out to explore …
Design And Fabrication Of A Low Power 7.2 Terabit Transmitter For Exascale Computing, Scott Mcwilliams, Scott Mcwilliams
Design And Fabrication Of A Low Power 7.2 Terabit Transmitter For Exascale Computing, Scott Mcwilliams, Scott Mcwilliams
Electrical Engineering Theses and Dissertations
Enhanced Coupled Strength (ECS) gratings fabricated into III-V based devices offer high reflected power per unit length and broad band reflectivity as compared to conventional 1st order gratings, desired qualities for short-haul high speed transmitters that can be implemented without the need for chip-level temperature control, contributing to the low power per transmitted bit. For commercial DBR lasers, the grating reflectivity results in an extremely narrow reflectivity spectrum, which is highly desired for most/many applications, but requires a power hungry thermo-electric cooler to maintain a fixed frequency. The proposed LEAM (laser electro-absorption modulator) requires a broad reflectivity spectrum, which, by …