Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 2 of 2
Full-Text Articles in Engineering
Study Of Radiation Effects In Gan-Based Devices, Han Gao
Study Of Radiation Effects In Gan-Based Devices, Han Gao
Electrical Engineering Theses and Dissertations
Radiation tolerance of wide-bandgap Gallium Nitride (GaN) high-electron-mobility transistors (HEMT) has been studied, including X-ray-induced TID effects, heavy-ion-induced single event effects, and neutron-induced single event effects. Threshold voltage shift is observed in X-ray irradiation experiments, which recovers over time, indicating no permanent damage formed inside the device. Heavy-ion radiation effects in GaN HEMTs have been studied as a function of bias voltage, ion LET, radiation flux, and total fluence. A statistically significant amount of heavy-ion-induced gate dielectric degradation was observed, which consisted of hard breakdown and soft breakdown. Specific critical injection level experiments were designed and carried out to explore …
Indirect Imaging Using Computational Imaging Techniques, Aparna Viswanath
Indirect Imaging Using Computational Imaging Techniques, Aparna Viswanath
Electrical Engineering Theses and Dissertations
The work describes various methods employed towards solving the problem of indirect imaging. Computational techniques are employed to indirectly decipher information about an object hidden from view of a camera. Notion of virtualizing the source of illumination and detectors on real world rough surfaces was exploited to construct a non line of sight computational imager. Diversity was explored from the stand point of both illumination of the object and imaging of light reflected from the object. To understand the impact of scattering by real world rough surfaces, an instrument was developed that allows characterization of isoplanatic angle for different surface …