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Articles 1 - 6 of 6
Full-Text Articles in Engineering
Metal-Assisted Etching Of Silicon Molds For Electroforming, Ralu Divan, Dan Rosenthal '14, Karim Ogando, Leonidas E. Ocola, Daniel Rosenmann, Nicolaie Moldovan
Metal-Assisted Etching Of Silicon Molds For Electroforming, Ralu Divan, Dan Rosenthal '14, Karim Ogando, Leonidas E. Ocola, Daniel Rosenmann, Nicolaie Moldovan
Student Publications & Research
Ordered arrays of high-aspect-ratio micro/nanostructures in semiconductors stirred a huge scientific interest due to their unique one-dimensional physical morphology and the associated electrical, mechanical, chemical, optoelectronic, and thermal properties. Metal-assisted chemical etching enables fabrication of such high aspect ratio Si nanostructures with controlled diameter, shape, length, and packing density, but suffers from structure deformation and shape inconsistency due to uncontrolled migration of noble metal structures during etching. Hereby the authors prove that a Ti adhesion layer helps in stabilizing gold structures, preventing their migration on the wafer surface while not impeding the etching. Based on this finding, the authors demonstrate …
Fe, Co And Ni Adatoms Adsorbed On Silicene: A Dft Study, Kent Gang '14, Siva Gangavarapu '14, Matthew Deng '14, Glenn W. "Max" Mcgee, Ron Hurlbut, Michael Lee Dao Kang, Sean Ng Peng Nam, Harman Johll, Tok Eng Soon
Fe, Co And Ni Adatoms Adsorbed On Silicene: A Dft Study, Kent Gang '14, Siva Gangavarapu '14, Matthew Deng '14, Glenn W. "Max" Mcgee, Ron Hurlbut, Michael Lee Dao Kang, Sean Ng Peng Nam, Harman Johll, Tok Eng Soon
Student Publications & Research
Two-dimensional materials have attracted much research attention given their intriguing properties. The latest member of this class of materials is silicene. In this work, we investigate the adsorption of Fe, Co and Ni adatoms on silicene using plane-wave density functional theory calculations within the Perdew-Burke-Ernzerhof parameterization of the generalized gradient approximation for the exchange-correlation potential. In particular, we calculate the binding energy, magnetization, and projected electronic configurations of these adatoms adsorbed at different sites on the silicene. Our calculations show that the hole site (i.e. in the centre of a hexagonal-like arrangement of Si atoms) is the most stable configuration …
Reversible Mn Segregation At The Polar Surface Of Lithium Tetraborate, Christina L. Dugan, Robert L. Hengehold, Stephen R. Mchale, Juan A. Colon Santana, John W. Mcclory, Volodymyr T. Adamiv, Yaroslav V. Burak, Ya B. Losovyj, Peter A. Dowben
Reversible Mn Segregation At The Polar Surface Of Lithium Tetraborate, Christina L. Dugan, Robert L. Hengehold, Stephen R. Mchale, Juan A. Colon Santana, John W. Mcclory, Volodymyr T. Adamiv, Yaroslav V. Burak, Ya B. Losovyj, Peter A. Dowben
Faculty Publications
We find Mn surface segregation for single crystals of Mn doped Li2B4O7, nominally Li1.95Mn0.05B4O7(001), but as the temperature increases, evidence of this Mn surface segregation diminishes significantly. At room temperature, the surface photovoltaic charging is significant for this pyroelectric material but is quenched at a temperature well below that seen for the undoped Li2B4O7 samples. The suppression of surface charging in the region of 120 °C that accompanies the temperature of Mn dissolution in the bulk of Li2B4 …
Extending Device Performance In Photonic Devices Using Piezoelectric Properties, Gregory Edward Triplett
Extending Device Performance In Photonic Devices Using Piezoelectric Properties, Gregory Edward Triplett
Electrical and Computer Engineering Publications
This study focuses on the influence of epi-layer strain and piezoelectric effects in asymmetric GaInAs/GaAlAs action regions that potentially lead to intra-cavity frequency mixing. The theoretical limits for conduction and valence band offsets in lattice-matched semiconductor structures have resulted in the deployment of non-traditional approaches such as strain compensation to extend wavelength in intersubband devices, where strain limits are related to misfit dislocation generation. Strain and piezoelectric effects have been studied and verified using select photonic device designs. Metrics under this effort also included dipole strength, oscillator strength, and offset of energy transitions, which are strongly correlated with induced piezoelectric …
Pseudomorphic Growth Of Inas On Misoriented Gaas For Extending Quantum Cascade Laser Wavelength, Gregory Edward Triplett, Charles Meyer, Emily Cheng, Justin Grayer, David Mueller, Denzil Roberts, Samuel Graham
Pseudomorphic Growth Of Inas On Misoriented Gaas For Extending Quantum Cascade Laser Wavelength, Gregory Edward Triplett, Charles Meyer, Emily Cheng, Justin Grayer, David Mueller, Denzil Roberts, Samuel Graham
Electrical and Computer Engineering Publications
The authors have studied the impact of epilayer strain on the deposition of InAs/GaAs on (100) and (111)B with 2 degrees offset toward 2-1-1 surfaces. Consequences of a 7% lattice mismatch between these orientations in the form of three-dimensional growth are less apparent for (111)B with 2 degrees offset toward 2-1-1 surfaces compared to (100). By exploring a range of molecular beam epitaxy process parameters for InAs/GaAs growth and utilizing scanning electron microscopy, atomic force microscopy, and Raman spectroscopy to evaluate the quality of these strained layers, the authors develop empirical models that describe the influence of the process conditions …
Recent Developments In Magneto-Optic Garnet-Type Thin-Film Materials Synthesis, Mohammad Nur E Alam, Mikhail Vasiliev, Viacheslav Kotov, Kamal Alameh
Recent Developments In Magneto-Optic Garnet-Type Thin-Film Materials Synthesis, Mohammad Nur E Alam, Mikhail Vasiliev, Viacheslav Kotov, Kamal Alameh
Research outputs 2013
Magneto-optic (MO) garnets are used in a range of applications in nanophotonics, integrated optics, communications and imaging. Bi-substituted iron garnets of different compositions are the most useful class of materials in applied magneto- optics due to their excellent MO properties (large Faraday effect) and record-high MO figure of merit among all semi- transparent dielectrics. It is highly desirable to synthesise garnets which possess simultaneously a high MO figure of merit and large uniaxial magnetic anisotropy. However, the simultaneous optimization of several material properties and parameters can be difficult in single-layer garnet thin films, and it is also challenging to prepare …