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Combinatorial Cuni Alloy Thin Film Catalysts For Layer Number Regulation In Cvd Grown Graphene, Sumeer Khanna
Combinatorial Cuni Alloy Thin Film Catalysts For Layer Number Regulation In Cvd Grown Graphene, Sumeer Khanna
Masters Theses
In this work, synthesis of combinatorial library of CuxNi1-x (copper nickel) alloy thin films via co-sputtering from Cu (copper) and Ni (nickel) targets as catalysts for chemical vapor deposition (CVD) growth of graphene is reported. The gradient alloy morphology, composition and microstructure were characterized via scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDS), and x-ray diffraction (XRD), respectively. Subsequently, the CuxNi1-x alloy thin films were used to grow graphene in a CH4-Ar-H2 (methane-argon-hydrogen) ambient in thermal CVD tube furnace. The underlying rationale is to adjust the CuxNi1-x …
Hot Filament Chemical Vapor Deposition Of Semiconducting Boron Carbide Thin Films, Michael Dylan Richardson
Hot Filament Chemical Vapor Deposition Of Semiconducting Boron Carbide Thin Films, Michael Dylan Richardson
Masters Theses
A highly efficient, low-power, compact thermal neutron detection system with excellent gamma-ray discrimination is desired for a number of applications. 10B [boron- 10] has a large cross section for thermal values and a Q-value of 2.78 MeV. For this reason, investigations into boron carbide, boron nitride, and boron phosphide semiconductor neutron detectors are underway. Because boron carbide has the highest fraction of boron of the three, it holds the highest potential. With this in mind, a hot filament chemical vapor deposition (HFCVD) system was designed and built in order to grow thin films of boron carbide onto n-type silicon …
Low Temperature Thermally Activated Cvd Of Silicon On Molybdenum For Oxidation Protection, Brian C. Jolly
Low Temperature Thermally Activated Cvd Of Silicon On Molybdenum For Oxidation Protection, Brian C. Jolly
Masters Theses
The United States Global Threat Reeducation Initiative (GTRI) is promoting the production of molybdenum-99 without the use of uranium-235. One possible route, called neutron capture technology, is through the activation of molybdenum-98 via irradiation. GE-Hitachi has identified a location within their boiling water reactors for molybdenum-98 irradiation, but the elevated temperatures present risk oxidizing the molybdenum. This work explored using a silicon coating to protect the molybdenum from oxidation. With silane gas as the precursor, chemical vapor deposition was employed to produce the silicon coating. Characterization was performed and showed a discrete silicon layer was deposited with little to no …